本文采用有限体积元法软件CrysVUn对直拉法生长直径300mm硅单晶热场和热应力分布进行了模拟.后继加热器通过补充晶体径向的热散失,使得沿生长界面径向的由熔体向晶体的热输运实现平衡,使晶体生长界面更加平坦.随着热屏材料热辐射率的降低,晶体生长界面趋于平坦,生长界面上方热应力水平也随着热屏材料辐射率的减小而下降,使用内层高辐射率材料、外层低辐射率材料的复合式热屏结构进一步降低了晶体生长界面中心高度.
参考文献
| [1] | Ramachandran P A;Dudukovic M P .Simulation of Temperature Distribution in Crystals Grown by Czochralski Method[J].Journal of Crystal Growth,1985,71:399-408. |
| [2] | Derby J J;Brown R A .Thermal-capillary Analysis of Czochralski and Liquid Encapsulated Czochralski Crystal Growth:Ⅰ.Simulation[J].Journal of Crystal Growth,1986,74:605-624. |
| [3] | Derby J J;Brown R A .Thermal-capillary Analysis of Czochralski and Liquid Encapsulated Czochralski Crystal Growth:Ⅱ.Processing Strategies[J].Journal of Crystal Growth,1986,75:227-240. |
| [4] | Kinney T A;Bornside D E;Brown R A;Kim K M .Quantitative Assessment of an Integrated Hydrodynamic Thermal-capillary Model for Large-diameter Czochralski Growth of Silicon:Comparison of Predicted Temperature Field With Experiment[J].Journal of Crystal Growth,1993,126:413-434. |
| [5] | Assaker R.;Dupret F.;Vandenbogaert N. .TIME-DEPENDENT SIMULATION OF THE GROWTH OF LARGE SILICON CRYSTALS BY THE CZOCHRALSKI TECHNIQUE USING A TURBULENT MODEL FOR MELT CONVECTION[J].Journal of Crystal Growth,1997(3/4):450-460. |
| [6] | Aleksey Lipchin;Robert Brown A .Hybrid Finite-volume/finite-element Simulation of Heat Transfer and Melt Turbulence in CZ Crystal Growth of Silicon[J].Journal of Crystal Growth,2000,216:192-203. |
| [7] | Evstratov IY.;Kalaev VV.;Zhmakin AI.;Makarov YN.;Abramov AG.;Ivanov NG.;Korsakov AB.;Smirnov EM.;Dornberger E.;Virbulis J.;Tomzig E.;von Ammon W. .Numerical study of 3D unsteady melt convection during indu strial-scale CZ Si-crystal growth[J].Journal of Crystal Growth,2002(Pt.3):1757-1761. |
| [8] | C eorg Müller .Experimental Analysis and Modeling of Melt Growth Process[J].Journal of Crystal Growth,2002,237-239:1628-1637. |
| [9] | Krauze A;Muiznieks A;Mühlbauer A;Wetzel T .Numerical 2D Model of Turbulent Melt Flow in CZ System with Dynamic Magnetic Fields[J].Journal of Crystal Growth,2004,266:40-47. |
| [10] | Kalaev VV.;Lukanin DP.;Zabelin VA.;Makarov YN.;Virbulis J.;Dornberger E.;von Ammon W. .Calculation of bulk defects in CZ Si growth: impact of melt turbulent fluctuations[J].Journal of Crystal Growth,2003(1/2):203-208. |
| [11] | Krauze A;Muiznieks A;Mühlbauer A;Wetzel Th,Tomzig E,Gorbunov L,Pedchenko A,Virbulis J .Numerical 3D Modeling of Turbulent Melt Flow in a Large CZ System with Horizontal DC Magnetic Field.Ⅱ.Comparison with Measurements[J].Journal of Crystal Growth,2004,265:14-27. |
| [12] | Liu Lijun;Koichi Kakimoto .3D Global Analysis of CZ-Si Growth in a Transverse Magnetic Field with Various Crystal Growth Rates[J].Journal of Crystal Growth,2005,275:e1521-e1526. |
| [13] | Kalsev V V;Evstratov I Yu;Makarov Yu N .Gas Flow Effect on Global Heat Transport Heat and Melt Convection in Czochralski Silicon Growth[J].Journal of Crystal Growth,2003,249:87-99. |
| [14] | O.A. Louchev;S. Kumaragurubaran;S. Takekawa;K. Kitamura .Thermally induced effects during initial stage of crystal growth from melts[J].Journal of Crystal Growth,2004(1/2):320-328. |
| [15] | Ivanov NG.;Korsakov AB.;Smirnov EM.;Khodosevitch KV.;Kalaev VV. Makarov YN.;Dornberger E.;Virbulis J.;von Ammon W. .Analysis of magnetic field effect on 3D melt flow in CZ Si growth[J].Journal of Crystal Growth,2003(1/2):183-188. |
| [16] | Th. Wetzel;J. Virbulis;A. Muiznieks;W. von Ammon;E. Tomzig;G. Raming;M. Weber .Prediction of the growth interface shape in industrial 300 mm CZ Si crystal growth[J].Journal of Crystal Growth,2004(1/3):34-39. |
| [17] | Matthias Robert;Horst Kurz .Development of CrysVUN + +,a Software System for Numerical Modeling and Control of Industrial Crystal Growth Process[D].Universit(a)t Erlangen-Nürnberg,1998. |
| [18] | 姚连增.晶体生长基础[M].合肥:中国科学技术大学出版社,1995 |
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