通过固态源的分子束外延系统生长了调制掺杂AlGaAs/GaAs结构材料和InP/InP外延材料.在生长含磷材料之后,生长条件(真空状态)变差;我们通过采取合理的工艺方法和生长工艺条件的优化,获得了电子迁移率为1.86×105cm2/Vs(77K)调制掺杂AlGaAs/GaAs结构材料和电子迁移率为2.09×105cm2/Vs(77K)δ-Si掺杂AlGaAs/GaAs结构材料.InP/InP材料的电子迁移率为4.57×104 cm2/Vs(77K),该数值是目前国际报道最高迁移率值和最低的电子浓度的InP外延材料.成功地实现了在一个固态源分子束外延设备交替生长高质量的调制掺杂AlGaAs/GaAs结构材料和含磷材料.
The modulation-doped AlGaAs/GaAs structures ( MD-GaAs ) and InP/InP epilayers have been grown by solid-source molecular beam epitaxy(SSMBE) system. After growing phosphorous contained materials, growth conditions were seriously deteriorated, but by using an appropriate method and optimized growth conditions via Hall measurements, 77K electron mobility of 1.86 × 105cm2/Vs for modulationdoped AlGaAs/GaAs structures, 2.09 × 105cm2/Vs for δ-doping Si:AlGaAs/GaAs structures, 4.57 ×104 cm2/Vs for InP/InP epilayers were achieved. The results show that the InP layer with thickness less than 2.5μm is a material with the highest mobility and the lowest electron concentration reported up to date. It comes true that alternative growth of high quality modulation doped GaAs and phosphorous contained materials (P-contained) in same SSMBE system can be successfully realized.
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