本文采用非平衡磁控溅射物理气相沉积工艺,在单晶硅基片上合成了立方氮化硼薄膜,并且通过采用过渡层提高了立方氮化硼薄膜的附着力,过渡层分别是碳化硼(B4C)薄膜以及碳化硼(B4C)薄膜与B-C-N梯度层的复合层(B4C/B-C-N).同时,不同过渡层的存在使立方氮化硼薄膜的剥落机理产生变化.
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