采用孪生ZnO(Al2O3:2%)对靶直流磁控溅射制备高透过率、高电导率的平面ZnO薄膜(迁移率为5.56 cm2/V·s,载流子浓度为4.57×1020cm-3,电阻率为2.46×10-3Ω·cm,可见光范围(380～800nm)平均透过率大于85%).用酸腐蚀的方法,可以获得绒面效果,而反应气压对绒面效果没有影响,薄膜的电学特性没有变化,绒面对光散射作用增强,导致相对于平面ZnO薄膜的透过率要低一些(可见光范围平均透过率大于80%).
参考文献
| [1] | Vallat-Sauvain E;Fa S.Improved Interface between Front TCO and Microcrystalline Silicon p-i-n Solar Cells[A].Materials Research Society,2001:664. |
| [2] | Wenas W W;Dairiki K;Yamada A.High Efficiency a-Si Solar Cells with ZnO Films[C].First WCPEC Hawai Dec.5-9,1994:413-416. |
| [3] | Wenas W W;Akira Yamada A;Makoto Konagai .Textured ZnO Thin Films for Solar Cells Grown by Metalorganic Chemical Vapor Deposition[J].Japanese Journal of Applied Physics,1991,30(3B):441-443. |
| [4] | O. Kluth;B. Rech;L. Houben;S. Wieder;G. Schope;C. Beneking;H. Wagner;A. Loffl;H. W. Schock .Texture etched ZnO:Al coated glass substrates for silicon based thin film solar cells[J].Thin Solid Films: An International Journal on the Science and Technology of Thin and Thick Films,1999(1/2):247-253. |
| [5] | Cullity B D.In Elements of X-ray Diffraction[M].Addison-Wesley Publishing Company Inc,1978:283-300. |
| [6] | O. Kluth;B. Rech;L. Houben;S. Wieder;G. Schope;C. Beneking;H. Wagner;A. Loffl;H. W. Schock .Texture etched ZnO:Al coated glass substrates for silicon based thin film solar cells[J].Thin Solid Films: An International Journal on the Science and Technology of Thin and Thick Films,1999(12):247-253. |
上一张
下一张
上一张
下一张
计量
- 下载量()
- 访问量()
文章评分
- 您的评分：
-
10%
-
20%
-
30%
-
40%
-
50%