近年来,宽带隙半导体GaN、SiC、ZnO,弛豫铁电体PZNT,热电半导体β-FeSi2,超导体MgB2等功能晶体材料引起了人们的广泛关注.这些材料大多具有非常优异的性能和巨大的应用前景,但生长工业应用的体单晶非常困难.本文从晶体生长技术角度综述了这些晶体的研究进展,结合其物理化学特性探讨了单晶生长中遇到的一些关键问题.通观这些热点单晶材料的研究现状,一方面我们可以把晶体膜的制备技术看作是传统晶体生长技术的延伸,另一方面,膜技术的发展和单晶生长中存在的问题,也是对传统生长工艺的挑战.
参考文献
| [1] | 李晋闽.SiC材料及器件研制的进展[J].物理,2000(08):481-487. |
| [2] | 王玉霞,何海平,汤洪高.宽带隙半导体材料SiC研究进展及其应用[J].硅酸盐学报,2002(03):372-381. |
| [3] | Furusho T;Sasaki M;Ohshima S .Nishino S. Bulk Crystal Growth of Cubic Silicon Carbide by Sublimation Epitaxy[J].Journal of Crystal Growth,2003,249:216-221. |
| [4] | RABACK P.Modeling of the Sublimation Growth of Silicon Carbide Crystals[A].Finland: Picaset Oy,1999 |
| [5] | Nishino S et al.Chemical Vapor Deposition of Single Crystalline β-SiC Films on Silicon Substrate with Sputtered Intermediate Layer[J].Journal of the Electrochemical Society,1980,127(12):2674-2680. |
| [6] | 梁春广,张冀.GaN--第三代半导体的曙光[J].半导体学报,1999(02):89-99. |
| [7] | 谢崇木 .光电子新材料GaN研究进展[J].半导体情报,1997,34(04):1-8. |
| [8] | Grzegory I. .High nitrogen pressure growth of GaN crystals and their applications for epitaxy of GaN - based structures[J].Materials Science & Engineering, B. Solid-State Materials for Advanced Technology,2001(1/3):30-34. |
| [9] | 顾忠良 .GaN半导体研究与进展[J].半导体情报,1999,36(04):10-14. |
| [10] | Kawamura F;Iwahashi T et al.Growth of a Large GaN Single Crystal Using the Liquid Phase Epitaxy (LPE) Technique[J].Japanese Journal of Applied Physics,2003(42):L4-L6. |
| [11] | Masato Aoki;Hisanori Yamane;Masahiko Shimada .Conditions for seeded growth of GaN crystals by the Na flux method[J].Materials Letters,2002(5):660-664. |
| [12] | Aoki M.;Yamane H.;Shimada M.;Sarayama S.;DiSalvo FJ. .GaN single crystal growth using high-purity Na as a flux[J].Journal of Crystal Growth,2002(1/2):70-76. |
| [13] | Youting Song;Wenjun Wang;Wenxia Yuan;Xing Wu;Xiaolong Chen .Bulk GaN single crystals: growth conditions by flux method[J].Journal of Crystal Growth,2003(3/4):275-278. |
| [14] | Foxon CT.;Harrison I.;Novikov SV.;Li T.;Campion RP.;Staddon CR. Davis CS.;Winser AJ.;Kovarsky AP.;Ber BJ. .The influence of arsenic incorporation on the optical properties of As-doped GaN films grown by molecular beam epitaxy using As-4 molecules[J].Journal of Crystal Growth,2002(2/3):343-348. |
| [15] | Soukhoveev et al.Characterization of 2.5-inch Diameter Bulk GaN Grown from Melt Solution[J].Physica Status Solidi,2001,A188(01):411. |
| [16] | Look DC. .Recent advances in ZnO materials and devices[J].Materials Science & Engineering, B. Solid-State Materials for Advanced Technology,2001(1/3):383-387. |
| [17] | 毛祥军;杨志坚;张国义;叶志镇 .在ZnO/Al2O3衬底上生长高质量GaN单晶薄膜[J].高技术通讯,1999,9(03):35-38. |
| [18] | Oka K.;Shibata H.;Kashiwaya S. .Crystal growth of ZnO[J].Journal of Crystal Growth,2002(Pt.1):509-513. |
| [19] | 王新强,杜国同,姜秀英.ZnO薄膜的研究进展[J].半导体光电,2000(04):233. |
| [20] | Sekiguchi T.;Obara K.;Shishido T.;Sakagami N.;Miyashita S. .Hydrothermal growth of ZnO single crystals and their optical characterization[J].Journal of Crystal Growth,2000(0):72-76. |
| [21] | PARK S E;Mulvihill M L;Risch G;Li Z, Uchino K, Shrout T R .The Role of Processing Variables in the Flux Growth of Lead Zinc Niobate-lead Titanate Relaxor Ferroelectric Single Crystals[J].Japanese Journal of Applied Physics,1996,35:3984. |
| [22] | KUWATA J;Uchino K;Nomura S .Dielectric and Piezoelectric Properties of Pb((Zn1/3Nb2/3)0.91Ti0.09)O3 Single Crystals[J].Japanese Journal of Applied Physics,1982(21):1298. |
| [23] | Service R E .Shape-changing Crystals Get Shiftier[J].Science,1997,275:1878. |
| [24] | 徐家跃,范世(马岂),孙仁英.0.91Pb（Zn1/3Nb2/3）O3-0.09PbTiO3的析晶行为及助溶剂法生长[J].硅酸盐学报,2002(06):721-724. |
| [25] | HaradaK;Shimanuki S;Kobayashi T et al.Growth of Pb((Zn1/3Nb2/3)0.91Ti0.09)O3 Single Crystal of Ultrosonic Transducer for Medical Application[J].Journal of Intelligent Material Systems and Structures,1999(10):493-497. |
| [26] | Harada K.;Kobayashi T.;Saitoh S.;Yamashita Y.;Shimanuki S. .Crystal growth and electrical properties of Pb((Zn1/3Nb2/3)(0.91)Ti-0.09)O-3 single crystals produced by solution Bridgman method[J].Journal of the American Ceramic Society,1998(11):2785-2788. |
| [27] | Harada K.;Yamashita Y.;Miwa K.;Hosono Y. .Piezoelectric Pb[(Zn1/3Nb2/3)(0.91)Ti-0.09]O-3 single crystals with a diameter of 2 inches by the solution Bridgman method supported on the bottom of a crucible[J].Journal of Crystal Growth,2001(1):294-298. |
| [28] | Xu J Y;Fan S J;Lu B L .Seeded Growth of Relaxor Ferroelectric Single Crystals Pb(Zn1/3Nb2/3)0.91Ti0.09]O3 by the Vertical Bridgman Method[J].Japanese Journal of Applied Physics,2002(40):7000-7002. |
| [29] | 徐家跃,童健,侍敏莉,陆宝亮,张爱琼,范世(马岂).弛豫铁电单晶PZNT93/7的生长与电性能研究[J].无机材料学报,2003(02):264-268. |
| [30] | Jiayue Xu;Jian Tong;Minli Shi;Anhua Wu;Shiji Fan .Flux Bridgman growth of Pb[(Zn_(1/3)Nb_(2/3))_(0.93)Ti_(0.07)]O_3 piezocrystals[J].Journal of Crystal Growth,2003(1/4):274-279. |
| [31] | Kloc C;Arushanov et al.Preparation and Properties of FeSi, α-FeSi2 and β-FeSi2 Single Crystals[J].Journal of Alloys and Compounds,1995,219:93-96. |
| [32] | Tomm Y;Ivaneko L et al.Effects of Doping on the Electric Properties of Semiconducting Iron Disilicide[J].Materials Science and Engineering,1996,B37:215-218. |
| [33] | Behr G;Ivanenko U L;Vinzelberg H;Heinrich A. .Single Crystal Growth of Non-stoichiometric β-FeSi2 by Chemical Transport Reaction[J].Thin Solid Films,2001,381:276-281. |
| [34] | Haruhiko Udono;Shinobu Takaku;Isao Kikuma .Crystal growth of β-FeSi2 by temperature gradient solution growth method using Zn solvent[J].Journal of Crystal Growth,2002(Pt.3):1971-1975. |
| [35] | M. Kuramoto;Y. Nose;Y. Momose .Liquid phase growth of bulk β-FeSi_2 single crystals using Sb solvent[J].Journal of Crystal Growth,2002(Pt.3):1981-1985. |
| [36] | Udono H;Kikuma I .Solution Growth of Single Phase β-FeSi2 Bulk Crystals[J].Japanese Journal of Applied Physics,2000,39:L225. |
| [37] | Lee S. .Crystal growth of MgB2[J].Physica, C. Superconductivity and its applications,2003(1/2):31-41. |
| [38] | Cho Y C;Park S E et al.Properties of Superconducting MgB2 Single Crystal Grown by a Modified Flux Method[J].Applied Physics Letters,2002,80:3569. |
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