利用GaAs量子阱中Γ谷束缚态与AlAs层中Χ谷束缚态在异质结界面处的共振Γ-X混合,使得光生电子不仅在实空间而且在K空间与光生空穴分离开来,从而在结构中形成了持久的电荷极化.这一效应已被C-V特性上所观察到的电容阶跃和正反方向扫描时所出现的双稳滞迟现象所证实.如果将我们的器件用作光存储单元,预期可以获得很长的存储时间Ts.同时,由于Γ-X混合隧穿速率很快,光子"读出"仍可以保持很快.
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