应用MBE技术和SK生长模式,通过对研究材料体系的应力分布设计,生长动力学研究和生长工艺优化,实现了In(Ga)As/GaAs,InAlAs/AlGaAs/GaAs和InAs/InAl(Ga)As/InP无缺陷量子点(线)的尺寸、形状、密度和分布有序性的可控生长,这对进一步的器件应用特别重要.讨论了半导体纳米结构的空间有序性分布物理起因和退火的机制.
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