本文通过合理控制真空还原时间和真空还原温度，利用真空还原V2O5的方法制备出具有优良热致相变性能的VO2薄膜；通过研究不同真空还原时间及真空退火温度对VO2薄膜结构和热致相变过程中光电性能的影响，得到最佳真空还原参数；制备的薄膜高/低温电阻变化最大达3个数量级，900nm波长光透过率在相变前后改变了40%左右，光学特性相变响应参数较大，热致相变性能优良。利用XPS、XRD对不同条件制备薄膜的化学状态和结晶状态进行了研究，结果表明较低温度退火有利于V5+离子的还原，而升高退火温度可改善结晶状态，退火时间对VO2中结晶状况和V离子价态有显著影响。讨论了离子价态和样品结晶状态对VO2薄膜热相变过程中热滞回线的宽度、相变温度点的影响。
VO2 thin film with good thermochromic properties have been prepared by controlling annealing time and annealing temperature in vacuum.The structural,optical and electrical properties of samples prepared at different parameters have been characterized by using techniques of XRD、XPS、UV-VIS and electrical measurements.The results show that before and after phase transition the resistance of VO2 thin films change about 103 orders,the transmittance of 900nm light change 40% and the switching velocity for absorptivity at 900nm is about 0.2607/min.The structural properties of samples have been improved while the phase-transition properties have declined with the increase of annealing time and annealing temperature.The valence of V and structure of samples have great effect on phase-transition properties of VO2.The best reasonable annealing time and annealing temperature has been got by discussing the effects of annealing time and annealing temperature on the phase-transition point,hysteresis width.
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