本文综述了在化学气相沉积(Chemical Vapor Deposition,CVD)金刚石薄膜过程中非金刚石衬底表面金刚石成核机理研究进展.主要讨论了衬底表面缺陷诱导金刚石成核模型,指出最大原子团的存在决定了金刚石成核是否能够在衬底表面发生;分析了金刚石在非金刚石衬底成核时的过渡层问题,提出了过渡层存在机理;对于在等离子体CVD中的偏压增强金刚石成核效应,提出的负偏压离子流增强成核模型和正偏压电子流增强成核模型,较好地解释了相关的实验现象:在表面反应机理基础上发展的金刚石成核动力学模型发现,在金刚石成核早期,较大的碳浓度可以极大地提高金刚石成核密度这一重要的金刚石成核现象.
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