本文报道了Ca3(VO4)2晶体生长时原料组分的选择,指出相图上CaO质量分数的范围在36%～40%是合理的生长区间.讨论了合成原料的合理方式,采用CaCO3与V2O5直接合成的方法能够避免采用CaO或Ca(OH)2与V2O5进行合成时原料与空气中的H2O及CO2反应,影响称量准确性的问题.详细地给出了光加热浮动熔区法和提拉法生长Ca3(VO4)2晶体时原料的制备工艺.采用光加热浮动熔区法时用9MPa压力制棒,采用两步法烧结:850℃×8h→1200℃×8h.在提拉法生长晶体时采用球磨机湿混料、80℃烘干、20MPa压力下压料饼,也采用两步法烧结:850℃×8h→1200℃×8h.
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