采用红外分析、金相技术及和透射电子显微(TEM)技术分析了射频PCVD法沉积氮化硼膜的形成过程.结果表明,在沉积过程中,非晶态氮化硼(a-BN)作为领先相首先按平面方式生长,然后立方氮化硼(c-BN)在其上成核,并靠沉积原子表面迁移过程而长大,这种过程交替进行的结果,使膜层由a-BN和c-BN组成.膜层的表面呈层状+胞状形貌,说明薄膜的生长不仅取决于固体表面的扩散,而且也与气相成分的扩散有关.
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