采用水热共还原法在105~180℃合成了宽度为40~100 nm的Sb2Se3纳米单晶带和直径为100~250nm的纳米单晶棒.用X射线衍射、透射电镜和高分辨电镜对所得的产物进行了表征.结果表明:Sb2Se3单晶带和单晶棒是结晶程度良好的纳米晶,单晶带和单晶棒的生长方向为[001];纳米结构形貌和尺寸随合成温度的改变而变化;并提出了Sb2Se3单晶带和单晶棒的生长模型.
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