采用磁控溅射的方法在Si基片上制备了La0.85Sr0.015MnO3-δ/Fe异质结构,对所制备结构中La0.85Sr0.015MnO3-δ薄膜的输运及光诱导特性进行了分析,表明薄膜在整个测量的温度区间内呈现金属一半导体相变,相变温度为130K.在低温金属相,磁场作用导致电阻减小,而高温半导体相则使电阻增大;激光辐照导致样品电阻减小,并产生瞬间光电导效应,即随着激光的关闭电阻瞬间恢复到原值,其相对变化值随着温度的降低而增大,并在温度为80K时达到极大值约1660%,分析认为该瞬态光电导效应可能与薄膜本身的氧缺陷有关.
The La0.85Sr0.015MnO3-δfilm has the transition from the ferromagnetic metallic phase to the paramagnetic insulating state at 130 K (near to the peak resistance temperature) in the current-in-plane geometry of La0.85Sr0.015MnO3-δ/Fe heterostructure. The irradiation of the laser induces the transient photoeonduetivity effect at T<300 K. The relative change in resistance decreases with increasing temperature, and the maximum of that is about 1660% at T=80 K. These can be attributed to the oxygen deficiency in the film.
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