我们用混合物理化学气相沉积(Hybrid physical-chemical vapor deposition简称为HPCVD)法在α-Al 2O 3(00l)衬底上原位制备了一批超导性能良好的外延MgB 2超导薄膜样品.用10%浓度的乙硼烷(B 2H 6)氢气混合气作为原料,研究了不同条件对MgB 2薄膜沉积速率的影响.在一定条件下制备了一批MgB 2薄膜,厚度为200nm左右,样品的零电阻转变温度( T c 0)最高达到39K.X射线衍射分析的θ～2 θ扫描表明, MgB 2薄膜的晶粒都具有较好的 C 轴取向,对样品的(101)面Φ扫描结果显示MgB 2薄膜晶格与衬底有很好的外延取向,取向关系为[1010] MgB 2∥[1120] Al 2O 3.由毕恩模型计算求得在5K和零场条件下,样品的临界电流密度 J c =9.8×10 6A/cm 2.这些结果表明HPCVD技术在MgB 2外延薄膜原位制备方面有着很大的优势,从而有利于实现MgB 2薄膜在电子器件方面的应用.
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