测量了La2-xBaxCuO4系列单晶样品的电阻率和热电势，我们发现，当x=0.125 (x=1/8)时，La2-xBaxCuO4的载流子是所有样品中局域化最强的，但数据分析结果显示，它又是弱局域化行为.文中我们讨论了Tc的被压制的原因，得出这可能与低温下LTO到LTT的结构相变，空穴与自旋的静态条纹有序有关.热电势结果观察不到任何声子曳引的痕迹，表明在LBCO体系中电声子的相互作用很弱.
The in-plane electrical resistivity and thermoelectric power have been measured for the single crystals of La2-xBaxCuO4 around x=0.125. The room temperature resistivity and thermopower present the maximum values at x=0.125, indicating the carrier concentration is the minimum and the carriers are most strongly localized at x=0.125. The observed semiconductor-like behavior can be well described by the weak-localized quasi-two-dimensional (2D) state. The steep rise in electric resistivity with the x=0.125 sample below 70K is attributed to the formation of static stripe-order of holes and spins which is pinned by the LTT structure, as discovered in La1.48Nd0.4Sr0.12CuO4. The temperature dependence of electric resistivity below 70K still be well described by the formula of ρ∝lnT. A definite change of slope of thermopower is observed at the LTO-LTT structural phase transition temperature. The origin of the 1/8 anomaly is discussed in the text.
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