在高真空条件下,采用脉冲激光沉积法在Si(111)衬底上制备了高度(111)取向的CeO2薄膜.使用反射高能电子衍射仪对薄膜制备过程进行了原位监测,衍射花样为清晰条纹状,显示薄膜结晶质量较好,表面平整光滑.采用X射线衍射仪对不同衬底温度、不同激光能量制备的薄膜进行了结构表征,随着温度升高和能量增强,CeO2薄膜(111)峰逐渐增强且峰位越来越靠近标准峰位,表明CeO2薄膜的取向性变好且薄膜应力逐渐下降.通过椭偏仪对薄膜的折射率进行了表征,结果表明薄膜的光学性能强烈依赖其结晶质量,结晶质量最好的样品折射率接近单晶薄膜.使用高分辨透射电镜表征了样品的横断面,照片显示薄膜内部原子排列有序,结晶质量较好,部分区域与衬底取向略有偏差.
参考文献
| [1] | 陈勇,杨志民,张心强.Si（100）衬底上CeO2薄膜的脉冲激光制备及性能研究[J].稀有金属,2011(05):709-714. |
| [2] | 杨萌萌,屠海令,张心强,熊玉华,王小娜,杜军.CeO2掺杂对HfO2栅介质电学特性的影响[J].稀有金属,2012(02):292-296. |
| [3] | Skorodumova NV.;Simak SI.;Abrikosov IA.;Johansson B. Lundqvist BI.;Ahuja R. .Electronic, bonding, and optical properties of CeO2 and Ce2O3 from first principles - art. no. 115108[J].Physical Review.B.Condensed Matter,2001(11):5108-0. |
| [4] | 李美亚,王忠烈,范守善,赵清太,熊光成,林揆训.气氛氧压对脉冲激光法制备的CeO2/Si薄膜的结晶取向的影响[J].功能材料,2000(02):159-161. |
| [5] | Jang SH.;Roh Y.;Jung D. .Properties of CeO2 thin films deposited on Si(100) and Si(111) substrates by radio frequency-magnetron sputtering[J].Journal of Vacuum Science & Technology, B. Microelectronics and Nanometer Structures: Processing, Measurement and Phenomena,1998(3):1098-1101. |
| [6] | 张冲,叶辉,张磊,皇甫幼睿,刘旭.在Si-Ge晶体外延生长中的RHEED花样研究[J].物理学报,2009(11):7765-7772. |
| [7] | Guhel, Y;Ta, MT;Bernard, J;Boudart, B;Pesant, JC .Raman characterization before and after rapid thermal annealing of CeO2 thin films grown by rf sputtering on (111) Si[J].Journal of Raman Spectroscopy: An International Journal for Original Work in All Aspects of Raman Spectroscopy, Including Higher Order Processes, and Also Brillouin- and Rayleigh Scattering,2009(4):401-404. |
| [8] | Chiu, FC;Lai, CM .Optical and electrical characterizations of cerium oxide thin films[J].Journal of Physics, D. Applied Physics: A Europhysics Journal,2010(7):075104:1-075104:5. |
| [9] | Catalina Mansilla .Structure, microstructure and optical properties of cerium oxide thin films prepared by electron beam evaporation assisted with ion beams[J].Solid state sciences,2009(8):1456-1464. |
上一张
下一张
上一张
下一张
计量
- 下载量()
- 访问量()
文章评分
- 您的评分：
-
10%
-
20%
-
30%
-
40%
-
50%