在室温下,利用不同磁感应强度相对分布因子S的磁控阴极溅射沉积了金属Mo薄膜.实验研究了磁控阴极S值对放电参数、Mo薄膜的结构、形貌及性能的影响.分别利用XRD,SEM和四探针技术对Mo薄膜的相结构、表面和截面形貌及电阻率进行表征分析.结果表明,随着磁控阴极S值的增加,Mo靶放电电压降低,而放电电流增加；不同S值的磁控阴极沉积的Mo薄膜均呈现多晶结构,且具有柱状生长特征；随着磁控阴极S因子的增加Mo膜的厚度和电导率呈现先增加而后减小的变化规律,电阻率最小可达4.9×10-6Ω·cm.
参考文献
| [1] | Waits Robert K .Planar magnetron sputtering[J].Journal of Vacuum Science and Technology,1978,15(02):179. |
| [2] | Window B;Sawides N .Charged particle fluxes from planar magnetron sputtering sources[J].Journal of Vacuum Science and Technology A:Vacuum Surfaces and Films,1986,4(02):196. |
| [3] | Window B;Sawides N .Unbalanced dc magnetrons as sources of high ion fluxes[J].Journal of Vacuum Science and Technology A:Vacuum Surfaces and Films,1986,4(03):453. |
| [4] | Sawides N;Window B .Unbalanced magnetron ion-assisted deposition and property modification of thin films[J].Journal of Vacuum Science and Technology A:Vacuum Surfaces and Films,1986,4(03):504. |
| [5] | Teer G .A magnetron sputter ion plating system[J].Surface and Coatings Technology,1988,36(3-4):901. |
| [6] | Teer G .Technical note:a magnetron sputter ion-plating system[J].Surface and Coatings Technology,1989,39/40(02):565. |
| [7] | William D Sproul;Paul J Rudnik;Michael E Graham;Suzanne L Rohde .High rate reactive sputtering in an opposed cathode closed-field unbalanced magnetron sputtering system[J].Surface and Coatings Technology,1990,43/44(01):270. |
| [8] | Window B;Savvides N .Charged particle fluxes from magnetron sputtering sources[J].Journal of Vacuum Science and Technology A:Vacuum Surfaces and Films,1986,4(02):196. |
| [9] | Thieme J;Gleber S;Mitrea G;Guttmann P .Microscopy and spectromicroscopy with soft X-ray[J].Optics and Precision Enginerring,2007,15(12):1878. |
| [10] | Kinoshito H;Kurihara K;Mizota T;Torii Y .Soft X-ray reduction lithography using multilayer mirrors[J].Journal of Vacuum Science and Technology B:Microelectronics and Nanometer Structures,1989,7(06):1648. |
| [11] | Iwata S;Yamamoto N;Kobayashi N;Terada T Mizutani T .A new tungsten gate process for VLSI applications[J].IEEE Transactions on Electron Devices,1984,31(09):1174. |
| [12] | Shah P L .Refractory metal gate processes for VLSI applications[J].IEEE Transactions on Electron Devices,1979,26(04):631. |
| [13] | Gordillo G.;Hernandez LC.;Grizalez M. .Structural and electrical properties of DC sputtered molybdenum films[J].Solar Energy Materials and Solar Cells: An International Journal Devoted to Photovoltaic, Photothermal, and Photochemical Solar Energy Conversion,1998(3/4):327-337. |
| [14] | Assmann L;Bernede JC;Drici A;Amory C;Halgand E;Morsli M .Study of the Mo thin films and Mo/CIGS interface properties[J].Applied Surface Science: A Journal Devoted to the Properties of Interfaces in Relation to the Synthesis and Behaviour of Materials,2005(1/3):159-166. |
| [15] | Gautier C.;Machet J. .STUDY OF THE GROWTH MECHANISMS OF CHROMIUM NITRIDE FILMS DEPOSITED BY VACUUM ARC EVAPORATION[J].Thin Solid Films: An International Journal on the Science and Technology of Thin and Thick Films,1997(1/2):43-52. |
| [16] | Cullity B D.Elements of X-Ray Diffraction[M].London:Second ed,Addison Wesley,1978 |
| [17] | Scofield JH.;Albin D.;Ballard BL.;Predecki PK.;Duda A. .SPUTTERED MOLYBDENUM BILAYER BACK CONTACT FOR COPPER INDIUM DISELENIDE-BASED POLYCRYSTALLINE THIN-FILM SOLAR CELLS[J].Thin Solid Films: An International Journal on the Science and Technology of Thin and Thick Films,1995(1):26-31. |
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