VGF法生长6英寸GaAs单晶生长速率的优化

稀有金属, 2011, 35(1): 42-46. doi: 10.3969/j.issn.0258-7076.2011.01.009

VGF法生长6英寸GaAs单晶生长速率的优化

丁国强 ^1, , 屠海令 ^2, , 苏小平 ^3, , 张峰燚 ^4, , 涂凡 ^5, , 王思爱 ^6,

1.北京有色金属研究总院;北京国晶辉红外光学科技公司,北京,100088

2.北京有色金属研究总院

3.北京有色金属研究总院;北京国晶辉红外光学科技公司,北京,100088

4.北京有色金属研究总院;北京国晶辉红外光学科技公司,北京,100088

5.北京有色金属研究总院;北京国晶辉红外光学科技公司,北京,100088

6.北京有色金属研究总院;北京国晶辉红外光学科技公司,北京,100088

基金项目: 国家"863"高技术研究项目(2002AAF3102)

关键词：砷化镓 , 生长速率 , 数值模拟 , 垂直梯度凝固

Growth Rate Optimization of 6" GaAs Single Crystal Grown by VGF Process

晶体的生长速率关系着晶体质量和生产效率,保证晶体质量的同时,实现较高的生产效率是晶体生长速率优化的主要目标.VGF技术生长晶体时,晶体的生长速率主要取决于控温点的温度及降温速率.在保持加热器控温点不变的情况下,利用数值模拟方法研究了0.9,1.8,3.6mm·h-13个速率下6英寸VGF GaAs单晶的生长,通过对比不同生长速率下温度梯度(均为界面附近晶体中的温度梯度)和固-液界面形状的变化及热应力的分布,得出以下结果:随着晶体生长速率的增加,轴向温度梯度增大的同时,沿径向增加也较快;但由于受氮化硼坩埚轴向较大热导率的影响,晶体边缘轴向温度梯度迅速减小;径向温度梯度在晶体半径70 mm处受埚壁的影响均变为负值,晶体中大量的热沿埚壁流失,导致生长边角上翘;生长速率的增加使得界面形状由凸变平转凹,"边界效应"逐渐增强,坩埚与固-液界面的夹角逐渐减小,孪晶和多晶产生的几率增加;通过对比,1.8 mm·h-1生长时晶体界面平坦、中心及边缘处热应力均较小、生长速率较大,确定为此时刻优化的生长速率.

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