基于黑硅材料的发展,讨论了国内外在黑硅制备技术方面的研究进展,包括反应离子刻蚀法、飞秒激光脉冲法、电化学刻蚀法及金属辅助刻蚀法,总结了各种工艺在应用上的特点,对黑硅材料当前取得的应用及发展进行了综述.结果表明:黑硅材料的特殊结构能够极大降低硅表面光反射,有效提高硅太阳能电池转换效率;其特殊光敏性可应用于光波探测器;表面各向异性的黑硅在红外吸收中可以产生太赫兹辐射.当前飞秒激光脉冲法制备的黑硅材料体现了很好的光敏性,并且有望直接嵌入目前半导体制造工艺,因此备受青睐,然则其制备成本较高;相比之下,电化学刻蚀法则设备简单、成本较低,亦颇具研究前景.最后,展望了国内黑硅材料的发展趋势.
参考文献
| [1] | Perng Dung-Ching;San Jose;Calif .Reduction of black silicon in semiconductor fabrication[P].United States:08/998,858,1997. |
| [2] | 陈长春,刘江锋,余本海,涂有超,戴启润.亚45 nm技术节点平面式硅基CMOS电路制作的材料选择[J].稀有金属,2007(01):112-118. |
| [3] | Lee Robert E .Mircrofabrication by ion-beam etching[J].Journal of Vacuum Science and Technology,1997,16(03):164. |
| [4] | Shaw Kevin A;Zhang Z Lisa;MacDonald Noel C .Scream 1:a single mask.Single-crystal silicon,reactive ion etching process for microelectromechanical structures[J].Sensors and Actuators A:Physical,1994,40:63. |
| [5] | Ren Yantong .Presence and future developing tendency of ion etching technology[J].Optical and Precision Engineering,1998,2(06):7. |
| [6] | Henri Jansen;Meint de Boer;Rob Legtenberg.The black silicon method:a universal method for determining the parameter setting of a fluorine-based reactive ion etcher in deep silicon trench ion etcher in deep silicon trench etching with profile control[J].Journal of Micromechnism and Microengineering,1995(05):115. |
| [7] | Henri Jansen;Meint de Boer;Miko Elwenspoek.The blacksilcon method IV:the fabrication of three dimensional structures in silicon with high aspect ratios for scanning probe microscopy and other applications[J].IEEE,1995:88. |
| [8] | Franz Laermer;Stuttgart;Andrea Sckilp;Schwaebisch Gmuend .Method of anisotropic etching of silicon[P].United States:09/328,019,1999. |
| [9] | Henri Jansen;Meint de Boer;Johannes Burger .The black silicon method 11;the effect of mask material and loading on the reactive ion etching of deep silicon trenches[J].Microelectronic Engineering,1995,27:475. |
| [10] | Marilyne Roumanie;Cyril Delattre;Frederique Mittler .Enhancing surface activity in silicon microreactors:Use of black silicon and alumina as catalyst supports for chemical and biological applications[J].Chemical engineering journal,2008(Suppl.1):317-326. |
| [11] | 何飞,程亚.飞秒激光微加工：激光精密加工领域的新前沿[J].中国激光,2007(05):595-622. |
| [12] | Tsing-Hua Her;Richard J. Finlay;Claudia Wu .Microstructuring of silicon with femtosecond laser pulses[J].Applied physics letters,1998(7/12):1673-1675. |
| [13] | C. H. Crouch;J. E. Carey;J. M. Warrender;M. J. Aziz;E. Mazur;F. Y. Genin .Comparison of structure and properties of femtosecond and nanosecond laser-structured silicon[J].Applied physics letters,2004(11):1850-1852. |
| [14] | Wu Claudia;Her Tsing-Hua;Mazur Eric.Black silicon:a new light absorber[A].,1999 |
| [15] | Eric Mazur;Jim Carey;Catherine Crouch.Fabricationg of micrometer-sized conical field emitters suing femtosecond laser-assis-ted etching of silicon[A].,2001 |
| [16] | Charlton MDB.;Parker GJ. .FABRICATION OF HIGH ASPECT RATIO SILICON MICROSTRUCTURES BY ANODIC ETCHING[J].Journal of Micromechanics and Microengineering,1997(3):155-158. |
| [17] | L. L. Ma;Y. C. Zhou;N. Jiang;X. Lu;J. Shao;W. Lu;J. Ge;X. M. Ding;X. Y. Hou .Wide-band "black silicon" based on porous silicon[J].Applied physics letters,2006(17):171907-1-171907-3-0. |
| [18] | Striemer C C;Fauchet P M .Dynamic etching of silicon for broadband antireflection applications[J].Applied Physics Letters,2002,81(16):2980. |
| [19] | 刘光友,谭兴文,姚金才,王振,熊祖洪.电化学制备薄黑硅抗反射膜[J].物理学报,2008(01):514-518. |
| [20] | 宋晓岚,杨海平,史训达,何希,邱冠周.硅材料及其电化学研究进展[J].材料导报,2006(02):21-25. |
| [21] | Svetoslav Koynov;Martin S. Brandt;Martin Stutzmann .Black nonreflecting silicon surfaces for solar cells[J].Applied physics letters,2006(20):203107.1-203107.3. |
| [22] | Koynov S;Brandt MS;Stutzmann M .Black multi-crystalline silicon solar cells[J].physica status solidi(RRL): rapid research letterse,2007(2):R53-R55. |
| [23] | Howard M. Branz;Vernon E. Yost;Scott Ward;Kim M. Jones;Bobby To;Paul Stradins .Nanostructured black silicon and the optical reflectance of graded-density surfaces[J].Applied physics letters,2009(23):231121-1--231121-3-0. |
| [24] | Samet T;Halbwax M;Torres R .Femtosecond laser for black silicon and photovoltaic cells[J].Process of SPIE,2008,6881:1. |
| [25] | Yoo Jinsu;Yu Gwonjong;Yi Junsin .Black surface structures for crystalline silicon solar cells[J].Journal of Micromechnism and Microengineering,2009,159-160:333. |
| [26] | Andrew Wilson .Black silicon sensors promise increased sensitivity[J].Vision Systems Design,2008,12-13(11):15. |
| [27] | JAMES E. CAREY;JASON SICKLER .IR DETECTORS: Black silicon sees further into the IR[J].Laser Focus World: The Magazine for the Photonics & Optoelectronics Industry,2009(8):39,41-42,44. |
| [28] | Stubenrauch M.;Fischer M.;Kremin C.;Hoffmann M.;Muller J. .Bonding of silicon with filled and unfilled polymers based on black silicon[J].Micro & nano letters,2007(1):6-8. |
| [29] | Stubenrauch M;Fishcer M;Kremin C .Black silicon-new funetionalities in microsystems[J].Journal of Micromechnism and Microengineering,2006,16:82. |
| [30] | Hoyer P;Theuer M;Beigang R .Terahertz emission from black silicon[J].Applied Physics Letters,2008,93:1. |
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