电阻率是多晶硅材料最重要的参数之一, 通过高温扩散镍杂质到多晶硅中, 利用四探针电阻测试仪、金相显微镜、扫描电镜(SEM)、电感耦合等离子发射光谱仪(ICP)、能谱分析(EDS), X射线衍射仪(XRD)等设备, 研究了镍对多晶硅电阻率的影响及机制.研究结果表明: 镍杂质使N型多晶硅电阻率增加, 使P型多晶硅电阻率减小;高温冷却后, 大量的镍与硅形成NiSi2析出相在多晶硅表面析出, 并对硅中的铁有吸附作用, 由于铁含量少而形成Fe0.42Si2.67新相且在表面析出, 这些硅化物会引起电阻率的变化.
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