采用CeO2与钨粉机械混合,制备了满足大功率微波器件要求的高性能掺杂CeO2钡钨阴极,利用扫描电镜、压汞仪等测试手段分析了阴极的微观结构.用水冷阳极二极管检测了阴极的发射性能.研究表明,掺杂CeO2钡钨阴极孔径分布较窄,为0.4～3.6um,平均孔径为2um.在阳极正常工作温度1050。C下,掺杂CeO2钡钨阴极的直流发射电流密度和脉冲发射电流密度分别为6.33,17.48A·cm-2,明显优于传统钡钨阴极,满足大功率微波器件要求.
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