二氧化硅由于具有良好的绝缘性能及稳定的硅/二氧化硅界面而长期用于硅集成电路的制备.然而对于纳米线宽的集成电路,需要寻找新的高介电常数(高k)的栅极介质材料代替二氧化硅,以保持一定的物理厚度和优良的耐压及漏电性能.这些栅极候选材料必须有较高的介电常数,合适的禁带宽度,高质量的表面形貌和热稳定性并与硅衬底间有良好界面.此外,其制备加工技术最好能与现行的硅集成电路工艺相兼容.本文从固体物理和材料科学理论出发,阐述选择高k栅介质材料的基本原则,介绍目前研究的材料体系、制备方法、材料性能以及界面稳定性,并展望了这些高k栅介质材料的应用前景.
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