基于有限元方法和实际器件的材料和结构参数,对1.3 μm InAsP/InGaAsP脊波导多量子阱激光器和8 μm InAlAs/InGaAs/InP量子级联激光器等半导体激光器在CW以及各种脉冲驱动条件下的热场分布进行了模拟计算和分析,并对研制的实际器件采用变脉冲方法对其热特性进行了测量表征,实测与模拟所得结果相当吻合.
参考文献
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