采用有效质量模型下的4×4 Luttinger-Kohn哈密顿量矩阵对GaxIn1-xAs/In0.80Ga0.20As0.44P0.56/InP量子阱结构进行了能带计算,求得了该量子阱结构跃迁能量随组份及阱宽的变化关系,从而得到了激射波长1.44 μm时的Ga组份x与阱宽Lw(在5～10 nm内取值)的相互关系: x=0.32013+0.06093Lw-0.00534 Lw2 + 0.00017483 Lw3,当阱宽为5～10 nm,因而Ga组份为0.51～0.57时,阱材料中产生的张应变量为: 0.29%～0.70%.最后,我们计算了该量子阱结构的能量色散关系和光增益谱,从而对x与Lw组合值进行优化.
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