为了提高永磁薄膜阵列的剩磁和最大磁能积, 在电镀制备CoNiMnP永磁薄膜阵列过程中引入少量稀土Nd原子替代部分Ni原子, 采用光刻和电镀技术在5 mm×5 mm×0.2 mm的硅片上设计并制备了2000个大小为50 μm×50 μm的CoNi1-xNdxMnP垂直各向异性永磁薄膜阵列, 并对该薄膜陈列的组成、磁性能等进行了分析与测试. 结果表明: 薄膜阵列的组成为(质量分数):Nd 1.90%, Co 86.62%, Ni 5.68%, Mn 2.06%, P 3.74%; 阵列垂直方向磁性能为:Hc=59.7 kA·m-1, Br=0.53 T, (BH)max=11.3 kJ·m-3; 阵列水平方向磁性能为: Hc=27.8 kA·m-1, Br=0.42 T, (BH)max=3.2 kJ·m-3.
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