利用磁控溅射技术,以 Mg0.06 Zn0.94 O 为陶瓷靶材,制备了 N 掺杂 p 型 Mg0.13 Zn0.87 O 薄膜,薄膜的电阻率为42.45Ω·cm,载流子浓度为3.70×1017/cm3,迁移率为0.40 cm2·V-1·s-1。研究了该薄膜 p 型导电性质在室温空气下随时间的变化情况。实验结果表明,薄膜的电阻率逐渐升高,载流子浓度降低,五个月以后,薄膜转变为 n 型导电,电阻率为85.58Ω·cm,载流子浓度为4.53×1016/cm3,迁移率为1.61 cm2·V-1·s-1。真空热退火后重新转变为 p 型。结果显示,其 p 型导电类型的转变与在空气中吸附 H 2 O 或 H 2等形成浅施主有关。
Using radio frequency magnetron sputtering,p-type N doped Mg0.1 3 Zn0.8 7 O film was depos-ited on quartz substrate with Mg0.0 6 Zn0.94 O target.The film has resistivity of 42.45 W · cm,Hall mobility of 0.40 cm2 ·V-1 ·s-1 and carrier concentration of 3.70×10 1 7/cm3 .The stability of p-type conductivity in this film preserved in room temperature air ambient was studied.It is found that the re-sistivity increased and the carrier concentration decreased with time.The film transformed from p-type to n-type semiconductor with resistivity of 85.58 W·cm,Hall mobility of 1.61 cm2 ·V-1 ·s-1 and carrier concentration of 4.53×10 1 6/cm3 after preservation for five months.The film transformed to p-type semiconductor again after thermal annealing under 10 -4 Pa.It can be deduced that,the p-type film reverts to n-type conductivity because hydrogen and water were adsorbed by film to create shal-low donors in air ambient.
参考文献
| [1] | 申德振;梅增霞;梁会力;杜小龙;叶建东;顾书林;吴玉喜;徐春祥;朱刚毅.氧化锌基材料、异质结构及光电器件[J].发光学报,2014(1):1-60. |
| [2] | Bagnall DM;Chen YF;Zhu Z;Yao T;Koyama S;Shen MY;Goto T.Optically pumped lasing of ZnO at room temperature[J].Applied physics letters,199717(17):2230-2232. |
| [3] | Tang ZK.;Yu P.;Kawasaki M.;Ohtomo A.;Koinuma H.;Segawa Y.;Wong GKL..Room-temperature ultraviolet laser emission from self-assembled ZnO microcrystallite thin films[J].Applied physics letters,199825(25):3270-3272. |
| [4] | 王玉超;吴天准;苏龙兴;张权林;陈明明;汤子康.高质量ZnO及BeZnO薄膜的发光性质[J].发光学报,2013(8):1035-1039. |
| [5] | 赵鹏程;张振中;姚斌;李炳辉;王双鹏;姜明明;赵东旭;单崇新;刘雷.通过交替生长气氛调控N掺杂ZnO薄膜电学特性[J].发光学报,2014(4):399-403. |
| [6] | 魏志鹏;吴春霞;吕有明;张振中;姚斌;张吉英;赵东旭;李炳辉;申德振;范希武.MgxZn1-xO合金制备及MgZnO/ZnO异质结构的光学性质[J].发光学报,2006(5):831-833. |
| [7] | Z. P. Wei;B. Yao;Z. Z. Zhang;Y. M. Lu;D. Z. Shen;B. H. Li;X. H. Wang;J. Y. Zhang;D. X. Zhao;X. W. Fan;Z. K. Tang.Formation of p-type MgZnO by nitrogen doping[J].Applied physics letters,200610(10):102104-1-102104-3-0. |
| [8] | 翟英娇;李金华;陈新影;宋星慧;任航;方铉;方芳;楚学影;魏志鹏;王晓华.镉掺杂氧化锌纳米花的制备及其光催化活性[J].中国光学,2014(1):124-130. |
| [9] | Ohtomo A.;Koida T.;Masubuchi K.;Koinuma H.;Sakurai Y. Yoshida Y.;Yasuda T.;Segawa Y.;Kawasaki M..MgxZn1-xO as a II-VI widegap semiconductor alloy[J].Applied physics letters,199819(19):2466-2468. |
| [10] | Decremps F.;Pellicer-Porres J.;Saitta AM.;Chervin JC.;Polian A..High-pressure Raman spectroscopy study of wurtzite ZnO - art. no. 092101[J].Physical Review.B.Condensed Matter,20029(9):2101-0. |
| [11] | A. Kaschner;U. Haboeck;Martin Strassburg;Matthias Strassburg;G. Kaczmarczyk;A. Hoffmann;C. Thomsen;A. Zeuner;H. R. Alves;D. M. Hofmann;B. K. Meyer.Nitrogen-related local vibrational modes in ZnO:N[J].Applied physics letters,200211(11):1909-1911. |
| [12] | Felice Friedrich;M. A. Gluba;N. H. Nickel.Identification of nitrogen and zinc related vibrational modes in ZnO[J].Applied physics letters,200914(14):141903-1-141903-3. |
| [13] | Gao, L.;Yao, B.;Liu, L.;Yang, T.;Liu, B.;Shen, D..Effects of Mg concentration on solubility and chemical state of N in N-doped MgZnO alloy[J].The Journal of Chemical Physics,201020(20):204501-1-204501-4. |
| [14] | Teresa M. Barnes;Kyle Olson;Colin A. Wolden.On the formation and stability of p-type conductivity in nitrogen-doped zinc oxide[J].Applied physics letters,200511(11):112112-1-112112-3-0. |
| [15] | Sunglae Cho;Jing Ma;Yunki Kim;Yi Sun;George K. L. Wong;John B. Ketterson.Photoluminescence and ultraviolet lasing of polycrystalline ZnO thin films prepared by the oxidation of the metallic Zn[J].Applied physics letters,199918(18):2761-2763. |
| [16] | Vanheusden K.;Seager CH.;Tallant DR.;Voigt JA.;Gnade BE.;Warren WL..MECHANISMS BEHIND GREEN PHOTOLUMINESCENCE IN ZNO PHOSPHOR POWDERS[J].Journal of Applied Physics,199610(10):7983-7990. |
| [17] | Studenikin SA.;Cocivera M.;Golego N..Fabrication of green and orange photoluminescent, undoped ZnO films using spray pyrolysis[J].Journal of Applied Physics,19984(4):2287-2294. |
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