纯铝薄膜被广泛用作TFT LCD的金属电极,但纯铝薄膜在热工艺中容易产生小丘,对TFT的阵列工艺的良率有较大影响.本文用磁控溅射的方法在不同温度下沉积纯铝薄膜作为薄膜晶体管的栅极,并通过电学检测、扫描电子显微镜和应力测试等方法对不同温度下沉积的纯铝薄膜的小丘生长情况进行了研究.实验结果表明:纯铝成膜温度提高,薄膜的晶粒尺寸增大,退火后产生小丘的密度和尺寸明显降低,温度应力曲线中屈服点温度也相应提高.量产中适当提高成膜温度,可以有效抑制小丘的发生,提高TFT阵列工艺的量产良率.
参考文献
| [1] | 王大海;杨柏梁;吴渊.TFT阵列金属电极的制备与性能[J].液晶与显示,200015(04):260-267. |
| [2] | 刘翔;陈旭;谢振宇.使用低电阻金属铝制造薄膜晶体管阵列信号电极[J].液晶与显示,200924(04):533-536. |
| [3] | Kwang Ho J;Soo Jung H;Young Chang J.Effect of capping layer on hillock formation in thin Al films[J].METALS AND MATERIALS INTERNATIONAL,200814(02):147-150. |
| [4] | 王刚;刘宏宇;赵超.表面无小丘Al双层栅电极结构研究[J].液晶与显示,200015(02):92-100. |
| [5] | Chaudhari P;Scott B A;Laibowitz R B.Simulation of structural anisotropy and void formation in amorphous thin films[J].APPLIED PHYSICS,197425(11):641-643. |
| [6] | Iwamura E;Ohnishi T;Yoshikawa K.A study of hillock formation on AlTa alloy films for interconnections of TFT-LCDs[J].THIN SOLID FILMS,1995270(1-2):450-455. |
| [7] | Ericson F;Kristensen N;Schweitz J A.A transmission electron microscopy study of hillocks in thin aluminum films[J].Microelectronics and Nanometer Structures,19919(01):58-63. |
| [8] | Chang C Y;Vook R W.Thermally induced hillock formation in Al-Cu films[J].Journal of Materials Research,19894(05):1172-1181. |
| [9] | Arai T;Makita A;Hiromasu Y.Mo-capped Al Nd alloy for both gate and data bus lines of liquid crystal displays[J].THIN SOLID FILMS,2001383(1-2):287-291. |
| [10] | Kim D K;Nix W D;Vinci R P.Study of the effect of grain boundary migration on hillock formation in Al thin films[J].Journal of Applied Physics,200190(02):781-788. |
| [11] | Onishi T;Iwamura E;Takagi K.Influence of adding transition metal elements to an aluminum target on electrical resistivity and hillock resistance in sputter deposited aluminum alloy thin film[J].Vacuum Science and Technology A,199614(05):2728-2735. |
| [12] | Dell'oca C J;Learn A J.Anodization of aluminum to inhibit hillock growth during high temperature processing[J].THIN SOLID FILMS,19718(05):R47-R50. |
| [13] | Chang C Y;Vook R W.The effect of surface aluminum oxide films on thermally induced hillock formation[J].THIN SOLID FILMS,1993228(1-2):205-209. |
| [14] | Takatsuji H;Haruta K;Tsuji S.Pure Al thin film protective layer to prevent stress migration in Al wiring for thin film transistors[J].Surface and Coatings Technology,2000125(1-3):167-172. |
| [15] | Iwamura E;Takgi K;Ohnishi T.Effect of aluminium oxide caps on hillock formation in aluminium alloy films[J].THIN SOLID FILMS,1999349(1-2):191-198. |
| [16] | Soo-Jung H;William D N;Young-Chang J.A model for hillock growth in Al thin films controlled by plastic deformation[J].Acta Materialia,200755(15):5297-5301. |
上一张
下一张
上一张
下一张
计量
- 下载量()
- 访问量()
文章评分
- 您的评分：
-
10%
-
20%
-
30%
-
40%
-
50%