采用六联苯(p-6P)和氧钒酞菁(VOPc)作为有源层材料,利用弱外延生长技术制备有机薄膜晶体管(OTFT).在相同的工艺条件下制备了顶栅结构(top-gate)和底栅结构(bottom-gate)两种器件构型,发现两种不同结构的OTFT器件特性存在较大的差异,top-gate OTFT的迁移率比bottom-gate OTFT高很多.在顶栅结构的器件构型中获得了较高的器件特性参数,迁移率达到1.6 cm2/V·s.研究了弱外延生长技术应用在两种不同器件构型中的差异,并解释了顶栅结构OTFT迁移率较高的原因.
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