采用喷涂工艺制备了结构为ITO/ZnO/ P3 HT:PCBM/V2O5/Ag(P3HT:聚噻吩；PCBM:6,6-苯基-C61-丁酸甲酯)的大面积倒置光伏器件,有效面积为1.0×1.1 cm2.光谱测试结果表明,退火处理后,P3HT:PCBM薄膜吸收显著增强,并且产生一定程度的红移.采用ZnO和V2 O5代替LiF和PEDOT:PSS(聚(3,4-乙撑二氧噻吩):聚苯乙烯磺酸盐)作为器件修饰层,避免了PEDOT:PSS对ITO的腐蚀和LiF潮解,采用Ag代替Al作为金属背电极避免了Al被氧化.经过后退火处理器件的效率从1.1％提升至1.65％.器件的稳定性相对于传统结构有了大幅提升,8周后器件效率只衰减10％.
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