利用高能真空微波辐照,仅以SiO2和人造石墨粉为原料,便捷快速地合成得到结晶良好的β-SiC晶粒.在利用各种表征手段综合分析SiC晶粒微观结构的基础上,确认高能微波辐照条件下,β-SiC晶粒的生长过程符合“光滑界面的二维形核生长”机制.借助于电子背散射衍射技术(EBSD)进行的原位解析发现,生长最快的{211}面在晶粒长大过程中逐渐被超覆,通过形成{421}过渡晶面而最终演变为{220}晶面,并成为晶粒的侧面;而生长最慢的{111}面则成为最后保留下来的六角形规则晶面.EBSD的解析结果为SiC晶粒生长过程中晶面演变提供了直接的实验证据.
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