借助射频磁控溅射成功制备了AlN/FeCoSiB磁电复合薄膜,探讨了退火条件对AlN薄膜压电性能和FeCoSiB薄膜磁性能的影响,并研究了其逆磁电响应.结果显示,500℃退火处理的A1N薄膜具有高度(002)择优取向和柱状生长结构；经过300℃退火后FeCoSiB薄膜的磁场灵敏度提高.该磁电复合薄膜的逆磁电电压系数(αCME)在偏置磁场(Hdc)为875 A/m时达到最大值62.5 A/(m.V)；且磁感应强度(B)随交变电压(Vac)的变化呈现优异的线性响应(线性度达到1.3％).这种AlN/FeCoSiB磁电复合薄膜在磁场或电场探测领域具有广阔的应用前景.
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