用常压烧结法制备K0.5Na0.5NbO3陶瓷.研究烧结温度与陶瓷密度和电学性能的关系.研究表明在1065℃～1120℃范围内,温度对陶瓷的密度有显著影响.当烧结温度为1100℃时,密度达到4.35 g/cm3(占理论密度的95％); 1100℃烧结的陶瓷表现出最好的电学性能,压电常数最大118 pC/N,相对介电常数最大达538,介电损耗最小仅4.7％,剩余极化强度为15.37 μC/cm2,矫顽场为13.16 kV/cm.陶瓷样品在206℃从正交结构转变到四方结构,居里温度为410℃.
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