采用静电纺丝结合氨气高温气相还原的方法制备了Ce3-掺杂和Sm3+掺杂的La3Si8O4N11纳米纤维和微米带薄膜.XRD、FE-SEM、EDX和PL等测试方法对材料进行表征.样品在1400℃下保温9h后的XRD图谱与La3Si8O4N11的标准卡片吻合,Sm3+和Ce3+的掺杂没有改变La3Si8O4N11的晶型.样品在宏观上仍保持薄膜状态.在343 nm附近紫外光的激发下,Ce3+掺杂的La3Si8O4N11纳米纤维在450 nm附近呈现出一个宽发射峰来自于Ce3+5d-4f电子跃迁的发射.Ce3+掺杂的La3Si8O4N11纳米纤维的衰减曲线为双衰减曲线,荧光寿命分别为8.27和32.72 ns.而Sm3+掺杂的La3Si8O4N11纳米纤维在409 nm的近紫外光的激发下,在575、600、610和650 nm处存在四个尖锐的窄峰来自于Sm3+的4f-4f电子跃迁的发射.
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