利用高温固相法合成了Ca9Gd2W4O24: Eu3+和Sr9Gd2W4O24: Eu3+两个系列四钨酸盐体系以及Ca3La2W2O12: Eu3+二钨酸盐体系荧光粉, 对比其荧光性能, 结果发现此三种多钨酸盐荧光粉在395 nm的近紫外和460 nm的蓝光区都有较高的激发强度, 与现有商业化近紫外光、蓝光LED芯片的发射光谱吻合, 可以被这两种LED芯片有效激发, 发射色纯度较高的红光, 是潜在的紫光和蓝光转换型白光LED用红色荧光粉. Eu3+离子在Ca9Gd2W4O24和Sr9Gd2W4O24两个四钨酸盐体系中没有浓度猝灭效应, 而在Ca3La2W2O12二钨酸盐体系中的最佳掺杂浓度为40%. 以其中性能优良的Ca9Eu2W4O24、Sr9Eu2W4O24和Ca3La1.2Eu0.8W2O12结合400 nm发射的紫光InGaN芯片以及460 nm发射的蓝光InGaN芯片制备LED器件, 探讨稀土多钨酸盐红色荧光粉在白光LED中实际应用存在的优点和局限性.
Three series of europium(Ⅲ) ion-doped tungstates red phosphors were prepared by the high temperature solid-state reaction method. Their photo-luminescent properties were investigated at room temperature. The results indicate that the phosphors show intensely red emission under 395 and 465 nm light excitation, matching with the light-emitting wavelength of a near-UV-emitting InGaN chip and a blue-emitting InGaN chip, respectively. Therefore the tungstates phosphors can be applied as an efficient red component for NUV InGaN-based and blue InGaN- based white LEDs. No concentration quenching of Eu3+ in Ca9Eu2W4O24 and Sr9Eu2W4O24 is observed, while the quenching concentration of Eu3+ in Ca3La2W2O12 is about 40%. Finally the related LEDs are fabricated with Ca9Eu2W4O24, Sr9Eu2W4O24 and Ca3La1.2Eu0.8W2O12, and the performances of these LEDs are discussed to analyze the advantage and deficiency of such tungstates phosphors in applications for WLEDs.
参考文献
| [1] | |
| [2] | |
| [3] | |
| [4] | |
| [5] | |
| [6] | Taguchi T. Present status of white LED lighting technologies in Japan. J. Light & |
- 下载量()
- 访问量()
- 您的评分：
-
10%
-
20%
-
30%
-
40%
-
50%