采用溶胶-凝胶方法在玻璃基ITO电极上制备了Pt/Pb((Zr_(0.4)Ti_(0.6))O_3(PZT)/ITO电容器.采用X射线衍射仪、铁电测试仪、分光光度计对其微观结构、电学性能及光学性能进行了测量.结果表明PZT薄膜结晶良好,具有(101)高度择优取向.铁电电容器具有良好的保持特性和抗疲劳特性,具有较大的剩余极化强度和电阻率,5V电压下的剩余极化强度和电阻率分别为41.7μC/cm~2和2.5×10~9Ω·cm;漏电流测量结果表明电压小于0.8V时为欧姆导电机制,当电压大于0.8V时,漏电流满足肖特基发射机制.光学透射谱结果表明在短波范围内,PZT表现出强吸收作用;在长波范围内,PZT表现为强透射,最大透射率达到95%.
Pt/Pb(Zr_(0.4)Ti_(0.6))O_3(PZT)/ITO capacitors were fabricated on glass substrate, where PZT film was prepared by sol-gel method. The structural and physical properties of Pt/PZT/ITO capacitors were inves-tigated. The microstructural, electrical and optical properties of Pt/PZT/ITO capacitors were characterized by X-ray diffraction (XRD), ferroelectric tester, UV-spectrophotometer, respectively. It is found that PZT is highly (101) oriented and well crystallized. Ferroelectric measurements indicate that Pt/PZT/ITO capacitor,measured at 5V, possesses good ferroelectric properties, such as fatigue-free characteristics, retention char-acteristics,large remnant polarization(41.7μC/cm~2)and high resistivity(2.5×10~9Ω·m).The analysisi of the leakage current mechanism indicates that Pt/PZT/ITO capacitor showes Ohmic-like behaviour at low voltages (<0.8V) and Schottky emission at high voltages (>0.8V). From the optical measurement, stron-ger absorption in shortwave and stronger transmission in longwave range are observed. The maximum value of transmission reaches 95%.
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