利用直流磁控溅射方法制备了GaN薄膜. X射线衍射及Raman光谱结果表明薄膜样品为非晶结构; 傅立叶红外光谱表明薄膜样品的主要吸收峰为Ga--N键的伸缩振动; 光致发光测试得到了360nm处的紫外发光谱; 测量薄膜样品的紫外-可
见谱, 并利用Tauc公式计算得到样品的光学带隙为3.74eV, 这与光致发光谱得到的结果是一致的.
GaN thin films were prepared by direct current (DC) planar magnetron sputtering on Si and SiO$_2$. The films were characterized by X-ray diffraction (XRD), Raman, Fourier Transform Infrared Spectroscopy (FTIR), photoluminescence (PL) and UV-Vis spectra. XRD and Raman spectrum show that the films are amorphous. Fourier infrared absorbance spectrum shows
that the main absorbance is Ga-N stretching vibration. 360nm ultraviolet emission is obtained at room temperature. UV-Vis result shows that the optical band gap of the films is 3.74eV, which is consistent with photoluminescence spectrum result.
\vspace*{.2cm
参考文献
| [1] | Stumm P, Drabold D A. Phys. Rev. Lett., 1997, 79: 677--680. [2] Yu M, Drabold D A. Solid State Commun., 1998, 108: 413--417. [3] Chen H, Chen K, Drabold D A. et al. Appl. Phys. Lett., 2000, 77: 1117--1119. [4] Nonomura S, Kobayashi S, Gotoh T, et al. J. Non-Cryst. Solids, 1996, 198-200: 174-177. [5] Kobayashi S, Nonomura S, Ohmori T, et al. Appl. Surf. Sci., 1997, 113-114: 480--484. [6] Ohkubo M, Nonomura S, Watanabi H, et al. Appl. Surf. Sci., 1997, 113-114: 476--479. [7] Tam H H, Williams J S, Zou J, et al. Appl. Phys. Lett., 1998, 72: 1190--1192. [8] Gurumurugan K, Chen H, Harp G R, et al. Appl. Phys. Lett., 1999, 74: 3008--3010. [9] Trodahl H J, Bittar A. Adv. Mater., 2001, 13: 1031--1033. [10] Bittar A, Trodahl H J, Kemp N T, et al. Appl. Phys. Lett., 2001, 78: 619--611. [11] Trodahl H J, Budde F, Ruck B J, et al. J. Appl. Phys., 2005, 97: 084309(1)--084309(5). [12] Kang Y X, Ingram D C. J. Appl. Phys., 2003, 93: 3954--3962. [13] Miyazaki T, Fujimaki T, Adachi S, et al. J. Appl. Phys., 2001, 89: 8316--8320. [14] Miyazaki T, Takada K, Adachi S, et al. J. Appl. Phys., 2005, 97: 093516(1)--093516(7). [15] Hovel H J, Cuomo J J. Appl. Phys. Lett., 1972, 20: 71--73. [16] Hariu T, Usuba T, Adachi H, et al. Appl. Phys. Lett., 1978, 32: 252--254. [17] Zhang J M, Ruf T, Cardona M, et al. Phys. Rev. B, 1997, 56: 14399--14406. [18] Bungaro C, Rapcewicz K, Bernholc. J Phys. Rev. B, 2000, 61: 6720--6725. [19] Zhang X, Hou Y T, Feng Z C, et al. J. Appl. Phys., 2001, 89: 6165--6170. [20] Sun Y, Miyasato T, Sonoda N. J. Appl. Phys., 1998, 84: 6451--6453. [21] SohS C B, Chua J, Lim H F, et al. J. Appl. Phys., 2004, 96: 1341--1347. [22] Tauc J. Amorphous and Liquid Semiconductors. London: Plenum Press, 1974. 159--220. |
- 下载量()
- 访问量()
- 您的评分：
-
10%
-
20%
-
30%
-
40%
-
50%