采用有Pb焊料对无Pb焊点球栅阵列(BGA)塑封器件进行焊接,选用再流焊工艺对器件进行混装焊接.对混装再流焊BGA器件分别进行4,9,16和25 d的高温老化实验,在老化实验前后不同阶段,使用精密电阻仪对混装BGA器件进行电性能测试,没有发现器件的电性能失效.利用SEM对焊点微观组织的分析发现,混装焊点印制电路板(PCB)侧金属间化合物(IMC)成分为Cu3Sn和Cu6Sn5,BGA焊盘侧IMC成分为Ni-Cu-Sn三元化合物.对焊点两侧的IMC进行厚度测量,结果表明,随老化时间延长两侧的IMC厚度都增大,PCB一侧IMC生长速率明显高于BGA焊盘一侧.此外,有一些焊点内部和界面处出现了富Pb相聚集、IMC破裂、界面裂纹以及空洞等可靠性隐患.
参考文献
[1] | Qu X,Chen Z X,Qi B,Lee T,Wang J J.Microelectron Reliab,2007; 47:2197 |
[2] | Kim Y B,Noguchi H,Amagai H.Microelectron Reliab,2006; 46:459 |
[3] | Kannabiran A,Pannerselvam E T,Ramkumar S M.IEEE Trans Electron Packag Manuf,2007; 30:138 |
[4] | Liang J,Downes S,Dariavach N,Shangguan D,Heinrich S M.J Electron Mater,2004; 33:1507 |
[5] | Ha S S,Sung J Y,Yoon J W,Jung S B.Microelectron Eng,2011; 88:709 |
[6] | Herkommer D,Punch J,Reid M.Microelectron Reliab,2010; 50:116 |
[7] | Zeng K J,Pierce M,Miyazaki H,Holdford B.J Electron Mater,2012; 41:253 |
[8] | Snugovsky P,McCormick H,Bagheri S,Bagheri Z,Hamilton C,Romansky M.J Electron Mater,2009; 38:292 |
[9] | Shang H X,Gao J X,Nicholson P I,Kenny S.Microelectron Reliab,2011; 51:994 |
[10] | Khatibi G,Wroczewski W,Weiss B,Ipser H.Microelectron Reliab,2009; 49:1283 |
[11] | Tu K N,Lee T Y,Jang J W,Li L,Frear D R,Zeng K,Kivilahti J K.Appl Phys,2001; 89:4843 |
[12] | Nousiainen O,Putaala J,Kangasvieri T,Rautioaho R,Vahakangas J.J Electron Mater,2006; 35:1857 |
[13] | Choubey A,Osterman M,Pecht M.IEEE Trans Device Mater Reliab,2008; 8:160 |
[14] | Chuang T H,Cheng C Y,Chang T C.J Electron Mater,2009; 38:2762 |
[15] | Koo J M,Jung S B.Microelectron Reliab,2007; 47:2169 |
[16] | Hsiao H Y,Liu C M,Lin H W,Liu T C,Lu C L,Huang Y S,Chen C,Tu K N.Science,2012; 336:1007 |
[17] | Yost F G,Ganyard F P,Kamowsky M M.Metall Mater Trans,1976; 7A:1141 |
[18] | Anderson I E,Walleser J W,Harringa J L,Laabs F,Kracher A.J Electron Mater,2009; 38:2770 |
[19] | Zhong W H,Chan Y C,Alam M O,Wu B Y,Guan J F.J Alloys Compd,2006; 414:123 |
[20] | Koo J M,Vu B Q,Kim Y N,Lee J B,Kim J W,Kim D U,Moon J N,Jung S B.J Electron Mater,2008; 37:118 |
[21] | Laurila T,Vuorinen V,Kivilahti J K.Mater Sci Eng,2005;R49:1 |
[22] | Lee T K,Ma H T,Liu K C,Xue J.JElectron Mater,2010; 39:2564 |
[23] | Xu L H,Pang J H L,Che F X.J Electron Mater,2008;37:880 |
[24] | Lin H J,Chuang T H.Microelectron Reliab,2011; 51:445 |
[25] | Lin K S,Huang H Y,Chou C P.J Mater Eng Perform,2009; 18:182 |
[26] | Yoon J W,Noh B I,Lee Y H,Lee H S,Jung S B.Microelectron Reliab,2008; 48:1864 |
[27] | Hang C J,Wang C Q,Mayer M,Tian Y H,Zhou Y,Wang H H.Microelectron Reliab,2008; 48:416 |
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