欢迎登录材料期刊网

材料期刊网

高级检索

理机制是流速的变化和阻力的变化之间存在滞后.

参考文献

[1] D.J.Larson,Orbital processing of high-quality cadmium zinc telluride (CdZnTe) compound semiconductors,Microgravity News,1(6),10(1994)
[2] T.Duffar,P.Dusserre,N.Giacometti,Dewetting and structural quslity of CdTe:Zn:V grown in space,Acta Astronautica,48(2-3),157-161(2001)
[3] M.P.Volz,M.Schweizer,N.Kaiser,S.D.Cobb,L.Vujisic,S.Motakef,F.R.Szofran,Bridgman growth of detached GeSi crystals,Journal Crystal Growth,237-239,1844-1848(2002)
[4] M.Schweizer,M.P.VoLz,S.D.Cobb,L.Vujisic,S.Motakef,J.Szoke,F.R.Szofran,Stability of detached-grown germanium single crystals,Journal Crystal Growth,237-239,2107-2111(2002)
[5] LIU Juncheng,GU Zhi,JIE Wanqi,Numerical Modelling of CdZnTe-VBM Crystal Growth,Chinese Journal of Materials Research,17(6),649-658(2003)(刘俊成,谷智,介万奇,垂直Bridgman法CdZnTe晶体生长过程的数值分析,材料研究学报,17(6),649-658(2003))
[6] ))
[7] (2003))
[8] (2007)
上一张 下一张
上一张 下一张
计量
  • 下载量()
  • 访问量()
文章评分
  • 您的评分:
  • 1
    0%
  • 2
    0%
  • 3
    0%
  • 4
    0%
  • 5
    0%