利用XRD(包括sin2ψ法)研究了电子辅助热灯丝化学气相沉积法(EA-HFCVD)生长的自支撑硼掺杂多晶金刚石薄膜的残余应力和微观应力.结果表明,薄膜的残余应力为压应力,随着薄膜制备过程中硼流量的增加,应力值有减小的趋势.薄膜的微观应力随着硼流量的增加,由拉应力转变为压应力然后又转变为拉应力.残余应力和微观应力的变化归因于一定量的硼掺杂导致的多晶膜中晶粒尺寸、晶面取向及孪晶变化的共同作用.
参考文献
| [1] | J.E.Field,The Properties of Natural and Synthetic Diamond (New York,Academic Press,1992) |
| [2] | JIN Zengsun,JIANG Zhigang,HU Hang,CAO Qingzhong,The growth behavior and internal stress of diamond thick films synthesized by hot-cathode DC-PCVD,New Carbon Materials,18(3),65(2003)(金曾孙,姜志刚,胡航,曹庆忠,热阴极DC-PCVD方法制备的金刚石厚膜的生长特性和内应力,新型炭材料,18(3),65(2003)) |
| [3] | ZHANG Ming,HE Jiawen,The effect of fiber texture on the stress analysis of thin films by X-ray diffraction,Materials For Mechanical Engineering,25(5),21(2001)(张铭,何家文,丝织构对薄膜X射线残余应力分析的影响,机械工程材料,25(5),21(2001)) |
| [4] | ZHAO Nanfang,YANG Qiaoqin,ZHAO Lihua,XIAO Hanning,LI Deyi,Intrinsic stress in diamond film growth by hot filament CVD,Mining and Metallurgical Engineering,18(3),67(1998)(赵南方,杨巧勤,赵立华,肖汉宁,李德意,热丝CVD法金刚石薄膜宏观内应力分析,矿冶工程,18(3),67(1998)) |
| [5] | Y.H.Lee,K.J.Bachmann,J.T.Glass,Y.M.LeGrice,R.J.Nemanich,Vapor deposition of diamond thin films on various substrates,Appl.Phys.Lett.,57(12),1916(1990) |
| [6] | M.Mermoux,B.Marcus,A.Crisci,A.Tajani,E.Gheeraert,E.Bustarret,Internal stresses in {111} homoepitaxial CVD diamond,Diamond.Relat.Mat,13(2),329(2004) |
| [7] | S.A.Stuart,S.Prawer,P.S.Weiser,Growth-sector dependence of fine structure in the first-order Raman diamond line from large isolated chemical-vapor-deposited diamond crystals,Appl.Phys.Lett.,62(11),1227(1993) |
| [8] | S.Chowdhury,M.T.Laugier,J.Henry,XRD stress analysis of CVD diamond coatings on SiC substrates,Int.J.Refract.Met.Hard Mater.,25(1),39(2007) |
| [9] | H.Windischmann,K.J.Gray,Stress measurement of CVD diamond films,Diamond Relat.Mat.,4(5-6),837(1995) |
| [10] | N.G.Ferreira,E.Abramof,E.J.Corat,V.J.Trava-Airoldi,Residual stresses and crystalline quality of heavily borondoped diamond films analysed by micro-Raman spectroscopy and X-ray diffraction,Carbon,41(6),1301(2003) |
| [11] | M.Hempel,M.H(a)rting,Characterisation of CVD grown diamond and its residual stress state,Diamond.Relat.Mat.,8(8-9),1555(1999) |
| [12] | H.Windischmann,G.F.Epps,Yue.Cong,R.W.Collins,Intrinsic stress in diamond films prepared by microwave plasma CVD,J.Appl.Phys.,69(4),2231(1991) |
| [13] | LI Chunyan,Preparation and Electrical Properties of Boron-doped Diamond Films,Ph.D Thesis,JiLin University,(2006).(李春燕,掺硼金刚石膜的制备及其电学性能研究,吉林大学博士学位论文,(2006)) |
| [14] | C.Y.Li,B.Li,X.Y.Lü,M.J.Li,Z.L.Wang,C.Z.Gu,Z.S.Jin,Superconductivity in heavily boron-doped diamond films prepared by electron assisted chemical vapour deposition method,Chinese Phys.Lett.,23(10),2856(2006) |
| [15] | B.D.Culllity,Element of X-ray Diffraction,2nd ed.(London,Addison-Wesley,1978) |
| [16] | I.C.Noyan,T.C.Huang,B.R.York,Residual stress/strain analysis in thin films by X-ray diffraction,Crit.Rev.Solid State Mater.Sci.,20,125(1995) |
| [17] | I.H.Choi,P.Weisbecker,S.Barrat,E.Bauer,Growth of highly oriented diamond films by the MPCVD technique using CO-H2,CH4-H2 and CH4-N2-H2 gas mixtures,Diamond Relat.Mat.,13(4-8),574(2004) |
| [18] | A.van der Drift,Evolutionary selection:a principle governing growth orientation in vapour deposited layers,Philips Res.Rep.,22,267(1967) |
| [19] | LIU Weiping,YU Qingxuan,TIAN Yuquan,LIAO Yuan,WANG Guanzhong,FANG Rongchuan,Effects of boron doping on the growth characteristic of diamond film,Journal of Inorganic Materials,20(5),1270(2005)(刘卫平,余庆选,田宇全,廖源,王冠中,方容川,硼掺杂对金刚石薄膜生长特性的影响,无机材料学报,20(5),1270(2005)) |
| [20] | Dan Wu,Y.C.Ma,Z.L.Wang,Q.Luo,C.Z.Gu,N.L.Wang,C.Y.Li,X.Y.Lü,Z.S.Jin,Optical properties of borondoped diamond,Phys.Rev.B,73(1),012501(2006) |
| [21] | M.S.Haque,H.A.Naseem,A.P.Malshe,W.D.Brown,A study of stress in microwave plasma chemical vapor deposited diamond films using X-ray diffraction,Chem.Vap.Deposition,3(3),129(1997) |
| [22] | ZHU Hongxi,MAO Weimin,FENG Huiping,Influence of texture on residual strain in CVD free standing diamond films,Chinese Journal of Materials Research,21(1),32(2007)(朱宏喜,毛卫民,冯惠平,织构对CVD自支撑金刚石薄膜残余应变的影响,材料研究学报,21(1),32(2007)) |
| [23] | S.K.Choi,D.Y.Jung,H.M.Choi,Intrinsic stress and its reiaxation in diamond film deposited by hot filament chemical vapor deposition,J.Vac.Sci.Technol.A,14(1),165(1996) |
| [24] | BAI Yizhen,Lü Xianyi,HAN Xuemei,JIN Zengsun,Lü Tianshan,BAI Yuan,Influences of deposition technologies on stress-etrain properties of thick diamond,Journal of Jilin University (Science Edition),44(5),784(2006)(白亦真,吕宪义,韩雪梅,金曾孙,吕天山,白媛,金刚石膜制备工艺对其应力-应变特性的影响,吉林大学学报(理学版),44(5),784(2006)) |
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