采用低压化学气相沉积方法在C面蓝宝石衬底上异质外延生长出高结晶质量和良好表面形貌的6H-SiC薄膜,研究了CsHs气体流速对薄膜结晶质量的影响.随着C3Hs气体流速的降低,薄膜的结晶质量先增加后降低,表明薄膜的生长在开始阶段受表面反应控制,而后受质量输运控制.所得到的结晶质量最好的6H-SiC薄膜,其摇摆曲线半高宽为0.6°,已经达到单晶水平.没有使用A1N过渡层,制备出结晶质量更好的SiC薄膜,表明对于蓝宝石衬底上SiC薄膜的生长,起决定性因素的是温度,过渡层不是影响SiC薄膜结晶质量的主要因素.
参考文献
| [1] | S.D.Morgen,M.L.Patrick,J.L.Aivars,Identification of trapping defects in 4H-silicon carbide metal-insulatorsemiconductor field-effect transistors by electrically detected magnetic resonance,Appl.Phys.Lett.,89,223502(2006) |
| [2] | JIA Hujun,YANG Yintang,CHAI Changchun,LI Yuejin,Microstructure of 6H-SiC thin films grown on Si via APCVD,Research & Progress SSE.,23(3),356(2003)(贾护军,杨银堂,柴长春,李跃进,外延生长6H-SiC/Si薄膜的微结构研究,固体电子学研究与进展,23(3),356(2003)) |
| [3] | SU Jianfeng.ZHENG Haiwu,LIN Bixia,ZHU Junjie,FU Zhuxi,Effect of carbonization on the heteroepitaxial growth of SiC films on Si substrates,Chinese Journal of Materials Research,20(3),231(2006)(苏剑峰,郑海务,林碧霞,朱俊杰,傅竹西,硅衬底碳化对异质外延SiC薄膜结构的影响,材料研究学报,20(3),231(2006)) |
| [4] | WANG Jianping,HAO Yue,PENG Jun,ZHU Zuoyun,ZHANG Yonghua,XRD and SIMS analysis of single crystal SiC films grown on sapphire,Acta Physica Sinica,51(8),1793(2002)(王剑屏,郝跃,彭军,朱作云,张永华,蓝宝石衬底上异质外延生长碳化硅薄膜的研究,物理学报,51(8),1793(2002)) |
| [5] | SUN Lan,CHEN Ping,HAN Ping,ZHENG Youdou,SHI Jun,ZHU Jia,ZHU Shunming,GU Shulin,ZHANG Rong,Single-crystalline 6H-SiC heteroepitaxial growth by chemical vapor deposition on sapphire substrates at reduced temperatures,Journal of Functional Materials,35,192(2004)(孙澜,陈平,韩平,郑有炓,史君,朱嘉,朱顺明,顾书林,张荣,蓝宝石衬底上6H-SiC单晶薄膜的化学气相淀积生长,功能材料,35,192(2004)) |
| [6] | M.C.Luo,J.M.Li,Q.W.Wang,G.S.Sun,L.Wang,G.R.Li,Y.P.Zeng,L.Y.Lin,Epitaxial growth and characterization of SiC on C-plane sapphire substrates by ammonia nitridation,J.Cryst.Growth,249,1(2003) |
| [7] | SONG Guoxiang,ZHANG Yonghua,ZHU Zuoyun,PENG Jun,WANG Jianping,HAO Yue,Mechanism of SiC heteroepitaxy on sapphire by APCVD,Journal of Functional Materials and Devices,8(4),391(2002)(宋国乡,张永华,朱作云,彭军,王剑屏,郝跃,蓝宝石衬底异质外延碳化硅薄膜反应机理研究,功能材料与器件,8(4),391(2002)) |
| [8] | MENG Guangyao,Chemical Vapor Deposition and New Inorganic Materials(Beijing,Science Press,1984)p.126(孟广耀,化学气相淀积与无机新材料(北京,科学出版社,1984) p.126 |
| [9] | H.W.Zheng,J.J.Zhu,Z.X.Fu,B.X.Lin,X.G.Li,Heteroepitaxial growth and characterization of 3C-SiC films on Si substrates using LPVCVD,J.Mater.Sci.Technol.,21,536(2005) |
| [10] | WANG Yuxia,GUO Zhen,HE Haiping,CAO Ying,TANG Honggao,Epitaxial growth of(0001)oriented 6H SiC Films on Si(111)Substrate by organic sol-gel film annealing,Acta Physica Sinica,50(2),256(2001)(王玉霞,郭震,何海平,曹颖,汤洪高,在Si(111)上用有机溶胶-凝胶甩膜热解法制备(0001)定向的6H-SiC薄膜,物理学报,50(2),256(2001)) |
| [11] | T.Ajagopalan,X.Wang,B.Lahlouh,C.Ramkumar,P.Dutta,S.Gangopadhyay,Low temperature deposition of nanocrystalline silicon carbide films by plasma enhanced chemical vapor deposition and their structural and optical characterization,J.Appl.Phys.,94(8),5252(2003) |
| [12] | M.W.Dashiell,L.V.Kulik,D.Hits,J.Kolodzey,G.Watson,Carbon incorporation in Si1-yCy alloys grown by molccular beam epitaxy using a single silicon-graphite source,Appl.Phys.Lett.,72,833(1998) |
| [13] | A.T.S.Wee,K.Li,C.C.Tin,Surface chemical states on LPCVD-grown 4H-SiC epilayers,Appl.Surf.Sci.,126,34(1998) |
上一张
下一张
上一张
下一张
计量
- 下载量()
- 访问量()
文章评分
- 您的评分：
-
10%
-
20%
-
30%
-
40%
-
50%