采用直流脉冲反应磁控溅射方法制备了高介电常数五氧化二钽(Ta2O5)薄膜.利用Ta/Ta2O5/Ta的MIM电容结构分析了Ta2O5的电学性能,研究了上电极面积对Ⅰ-Ⅴ特性的影响、Ⅰ-Ⅴ曲线的对称性和零点偏移以及薄膜缺陷和基底粗糙度对MIM电学性能的影响.结果表明,随着上电极面积增大,电容的漏电流密度增大,击穿场强减小.氧化钽薄膜中缺陷的存在和粗糙度增大容易引起漏电流增大,击穿强度降低.当上电极直径为1 mm时,MIM电容的性能最佳:击穿强度为2.22MV/cm,漏电流密度低于1×10-8A/cm2.
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