利用Ar+束溅射沉积技术在HgCdTe表面低温生长了CdTe介质薄膜.分别用CdTe介质膜和HgCdTe自身阳极氧化膜对HgCdTe表面钝化.利用光电导衰退信号波形的拟合,得到了不同表面钝化的HgCdTe非平衡载流子表面复合速度.结果表明,CdTe/HgCdTe界面质量已超过自身阳极氧化膜/HgCdTe界面质量.
参考文献
| [1] | D.L.Smith, D.K.Arch, R.A.Wood, M.W.Scott, Appl. Phys. Lett., 45(1), 83(1984) |
| [2] | C.T.Elliott, D.Day, D.J.Wilson, Infrared Phys., 22(1), 31(1982) |
| [3] | G.N.Pultz, P.W.Norton, E.E.Krueger, M.B.Reine, J.Vac. Sci. Technol. B, 9(5), 1724(1991) |
| [4] | L.O.Bubulac, C.R.Viswanathan, J.Cryst. Growth, 123(2), 555(1992) |
| [5] | Paul R. Norton, Optical Engineering, 30(11), 1649(1991) |
| [6] | PETER Capper, Properties of Narrow Gap Cadmium-based Compounds, edited by Peter Capper (London,the Institution of Electrical Engineers, INSPEC publication, 1994) p.248 |
| [7] | 赵军,碲镉汞新型钝化膜-碲化镉,博士学位论文,中国科学院上海技物所(1996) |
| [8] | Y.Nemirovsky, G.Bahir, J.Vac. Sci. Technol. A, 7(2), 450(1989) |
| [9] | 龚海梅,碲镉汞表面与界面,博士学位论文,中国科学院上海技物所(1993) |
| [10] | V.C.Lopes, Proc.1992 Meeting of the IRIS Specialty Group on Infrared Materials, edited by Ann Arbor (Moffett Field, CA, MI: Infrared Information Analysis Center, 1992) p.213 |
| [11] | D.E.Lackison, Semicond. Sci. Technol., 2(1), 33(1987) |
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