以SiC超细粉为原料、采用热等离子体物理气相沉积(TPPVD)技术快速制备出了高质量SiC/C薄膜,最大沉积速度达到225 nm/s,高于常规物理气相沉积(PVD)和化学气相沉积(CVD)法两个数量级.用扫描电子显微镜、高分辨透射电子显微镜和X射线光电子谱对薄膜的形貌和微结构进行了观察和分析,并用纳牛力学探针测定了薄膜的力学性能.研究结果表明,向等离子体中导入CH4,SiC/C薄膜沉积速度增大,薄膜中C含量增加,薄膜断面呈现柱状结构.薄膜硬度和弹性模量随薄膜中C含量增加而降低,在接触深度为40 nm时由纳牛力学探针测得沉积薄膜的最大硬度达到38 GPa.
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