利用直流磁控溅射方法制备了GaN薄膜.X射线衍射及Raman光谱结果表明薄膜样品为非晶结构;傅立叶红外光谱表明薄膜样品的主要吸收峰为Ga-N键的伸缩振动;光致发光测试得到了360nm处的紫外发光谱;测量薄膜样品的紫外-可见谱,并利用Tauc公式计算得到样品的光学带隙为3.74eV,这与光致发光谱得到的结果是一致的.
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