利用低压垂直布里奇曼法制备了不同In掺杂量的CdZnTe晶体样品,采用低温光致发光谱(PL)、深能级瞬态谱(DLTS)以及霍尔测试等手段研究了In掺杂CdZnTe晶体中的主要缺陷能级及其可能存在的补偿机制.PL测试结果表明,在In掺杂样品中,In原子占据了晶体中原有的Cd空位,形成了能级位于Ec-18meV的替代浅施主缺陷[In+Cd],同时[In+Cd]还与[v2-Cd]形成了能级位于Ev+163meV的复合缺陷[(In+Cd-V2-Cd)-].DLTS 分析表明,掺In样品中存在导带以下约0.74eV的深能级电子陷阱能级,这个能级很可能是Te反位[Tecd]施主缺陷造成的.由此,In掺杂CdZnTe晶体的电学性质是In掺杂施主缺陷、Te反位深能级施主缺陷与本征受主缺陷Cd空位和残余受主杂质缺陷补偿的综合结果.
参考文献
| [1] | Tiimay O Tfimer,Shi Yin,Victoria Cajipe,et al.Nuclear Instruments and Methods in Physics Research Section A:Accelerators,Spectrometers,Detectors and Associated Equipment,2003,497(1):21-29. |
| [2] | Limousin O.NuclearInstruments and Methods in Physics Research Section A:Accelerators,Spectrometers,Detectors and Associated Equipment,2003,504(1-3):24-37. |
| [3] | Sang Wenbin,Qian Yongbiao,Shi Weiming,et al.Journal of Crystal Growth.2000.214-215:30-34. |
| [4] | Fochuk P,Panchuk O,Feychuk P,et al.Nuclear Instrumerits and Methods in Physics Research Section A:Accelerators,Spectrometers,Detectors and Associated Equipment,2001,458(1-2):104-112. |
| [5] | Chu Muren,Terterian Sevag,Ting David,et al.Applied Physics Letters,2001,79(17):2728-2730. |
| [6] | Li Qiang,Jie Wanqi,Fu Li,et al.Journal of Applied Physics,2006,100(1):013518-1-4. |
| [7] | Taguchi T,Ray B.Progress in Crystal Growth and Characterization,1983,6(2):103-162. |
| [8] | Verity D,Shaw D,Bryant F J,et al.Journal of Physics C:Solid State Physics,1982,15(19):L573-L583. |
| [9] | Liu Hongtao,Sang Wenbin,Yuan Zheng,et al.Rare Metal Materials and Engineering,2007,36(6):1016-1019. |
| [10] | Yang Ge,Jie Wangqi,Li Qiang,et al.Journal of Crystal Growth,2005,283(3-4):431-437. |
| [11] | Fiederle M,Fauler A,Konrath J.et al.IEEE Transactions on Nuclear Science,2004,51(41):1864-1868. |
| [12] | Seto S,Suzuki K,Abastillas V N Jr,et al.Journal of Crystal Growth.2000.214-215:5-8. |
| [13] | Lang D V.Journal of Applied Physics,1974,45(7):3023-3032. |
| [14] | Berding M A.Applied Physics Letters,1999,74(4):552-554. |
| [15] | Meyer B K,Stadler W.Journal of Crystal Growth,1996,161(1-4):119-127. |
| [16] | Lee E Y,McChesney J L,James R B,et al.Compensation and trapping in semi-insulating CdZnTe,Proceedings of the 1999 Hard X-Ray,Gamma-Ray,and Neutron Detector Physics,Denver,CO,USA,1999,115-128. |
| [17] | Franc J,Hlidek P,Moravec P,et al.Semiconductor Science And Technology,2000,15(6):561-564. |
| [18] | Rub M,Achtziger N,Meier J,et al.Journal of Crystal Growth,1994,138(1-4):285-289. |
| [19] | Molva E,Pautrat J L,Saminadayar K,et al.Physical Review B,1984,30,003344. |
| [20] | Molva E,Saminadayar K,Pautrat J L,et al.Solid State Communications,1983,48(11):955-960. |
| [21] | Franc J,Babentsov V,Fiederle M,et al.IEEE Transactions on Nuclear Science,2004,51(3):1176-1181. |
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