采用脉冲激光沉积法(PLD),以KrF准分子为脉冲激光源,Si(100)为衬底,同时引入缓冲层TiN和Ti0.8Al0.2N,制备了结晶质量优异的AlN薄膜,X射线衍射(XRD)及反射式高能电子衍射(RHEED)分析表明AlN薄膜呈(001)取向、二维层状生长.研究发现,薄膜的生长模式依赖于缓冲层种类,直接在Si衬底上或MgO/Si衬底上的AlN薄膜呈三维岛状生长;而同时引入缓冲层TiN和Ti0.8Al0.2N时,AlN薄膜呈二维层状生长.此外,激光能量密度大小对AlN薄膜的结晶性有显著的影响,激光能量密度过大,薄膜表面粗糙,有颗粒状沉积物生成.在氮气气氛中沉积,能使薄膜的取向由(001)改变为(100).
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