研究了Au/NiCr/Ta多层金属膜的择优取向、残余应力以及它们之间的关系.结果表明,在实验范围内,残余应力随沉积温度变化不大,沉积态薄膜均表现为残余拉应力,经400℃Ar气中退火60 min转变为压应力.相应出现(111)与(200)衍射峰相对强度比值减小.Au(200)取向增加时,倾向为压应力,择优取向最大时有最低的平均残余压应力;Au(111)择优取向最大时有最高的平均残余拉应力;说明Au膜的择优取向和残余应力状态存在一定的联系.
参考文献
| [1] | Shute C J, Cohen J B. J Mater Res, 1991; 5:950 |
| [2] | Borgesen P, Lee J K, Gleixner R, Li C Y. Appl Phys Lett,1992; 60:1706 |
| [3] | Vinci R P, Marieb T N, Bravman J C. Mater Res Soc Symp Proc, 1993; 308:297 |
| [4] | Cullity B D. Elements of X-Ray Diffraction. Reading,Mass: Addison-Wesley, 1978:456 |
| [5] | Xu K W, He J W. Rare Met Mater Eng, 1989; 5:7(徐可为,何家文.稀有金属材料与工程,1989;5:7) |
| [6] | Bunshah R F. Proc 7th Int Vac Cong and 3rd Int Conf Solid Surface, Vienna, 1977:1553 |
| [7] | Mayadas A F, Shatzkes M. Phys Rev, 1970; B1: 1382 |
| [8] | Attardo M J, Rosenberg R. J Appl Phys, 1970; 41:2381 |
| [9] | Vaidya S, Sinha A K. Thin Solid Films, 1981; 75:253 |
| [10] | Xu K W, Gao R S, Chen J. Vac Sci Technol , 1993; 13:108(徐可为,高润生,陈谨.真空科学与技术,1993;13:108) |
| [11] | Zhang J M, Xu K W, Ji V. Appl Surf Sci, 2002; to be published |
| [12] | Ljungcrantz H, Hultman L, Sundgren J E. J Vac Sci Technol, 1993; 11A: 543 |
| [13] | Burnett A F, Cech J M. J Vac Sci Technol, 1993; 11A:297 |
| [14] | Murarka S P. Mater Sci Eng, 1997; R19:87 |
| [15] | Ray R A, Cuomo J J, Yee D S. J Vac Sci Technol , 1988;6A: 1621 |
| [16] | Kim S P, Choi H M, Choi S K. Thin Solid Films, 1998;322:298 |
| [17] | Zhang J M, Xu K W, Ji V. Appl Surf Sci, 2001; 180:1 |
| [18] | Zhang J M, Xu K W, Ji V. J Cryst Growth, 2001; 226:168 |
| [19] | Murakami M, Angelillo J, Huang H W, Segmuller A,Kircher C J. Thin Solid Films, 1979; 60: 1 |
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