通过碳化硅结合氮化硅室温电阻测试及动态电解过程中绝缘性测试实验.在室温25℃条件下进行电阻测试,结果显示碳化硅结合氮化硅材料在室温下电阻率大于2×108 Ω·cm,具有一定的绝缘性.在1020℃ ～1040℃条件下对材料进行了电解动态实验测试,同时对材料进行成分分析和XRD测试,结果表明在高温、氟盐腐蚀、电场交互作用的条件下绝缘性会随着使用时间延长逐渐降低.
Experiments were conducted to test the resistance at room temperature and the insulation in process of dynamic electrolysis for silicon carbide bonded silicon nitride materials.Results show that the resistivity of the materials is greater than 2 × 108 Ω · cm at 25℃,meaning they have electrical insulation.The results of dynamic test in electrolysis process in range of 1020℃ to 1040℃,composition analysis and XRD indicate that the insulation will decrease along with the time under the conditions of high temperature,fluoride salt corrosion and electric field interaction.
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