β-Ga2O3晶体是一种新型宽禁带氧化物半导体材料,本征导电性差.为了在调控导电性能的同时兼顾高的透过率和结晶性能,离子掺杂是一种有效的途径.采用光学浮区法生长出φ8 mm×50 mm蓝色透明In:Ga2O3晶体,晶体具有较高的结晶完整性.In3+离子掺杂后,β-Ga2O3晶体在红外波段出现明显的自由载流子吸收,热导率稍有减小.室温下,In:Ga2O3晶体的电导率和载流子浓度分别为4.94×10-4 S/cm和1.005×1016 cm-3,其值高于β-Ga2O3晶体约1个数量级.In:Ga2O3晶体电学性能对热处理敏感,1200℃空气气氛和氩气气氛退火后电导率降低.结果表明,In3+离子掺杂能够调控β-Ga2O3晶体的导电性能.
β-Ga2O3 crystal is a novel oxide semiconductor with wide bandgap, but its intrinsic conductive capabil-ity is poor. Ion doping is an effective way to regulate conductivity, transparency and crystallinity of the crystal. Transparent blue In:Ga2O3 single crystal with the dimension ofφ8 mm×50 mm was grown by optical floating zone method. The as-grown crystal is of good crystallization quality. After doping In3+ ion,β-Ga2O3crystal has strong in-frared absorption, and its thermal conductivity slightly decreases. At room temperature, the electrical conductivity and carrier concentration of as-grown In:Ga2O3 crystal are 4.94×10-4 S/cm and 1.005×1016 cm-3, respectively, which are approximately one order magnitude higher than that of undopedβ-Ga2O3 crystal. The electrical property of In:Ga2O3 crystal is sensitive to heat treatment. After annealing at 1200℃ in air or in argon, its electrical conductiv-ity decreases. These experimental results suggest that In3+ ion doping can improve the electrical property ofβ-Ga2O3 single crystal.
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