将原料封装入真空石英管,在873 K进行固相反应制各了Li掺杂的Cu1-xLixInSe2(x=0-0.4)块体材料,并对该材料的结构、电学和光学特性进行了系统性的研究.Li掺杂之后,样品的晶体结构还保持黄铜矿结构,并能得到更大的晶粒.而电阻率从1.98×102 Ω·cm增大到2.73×108 Ω·cm.光学能隙也从0.90 eV提高到1.33 eV,增大了光伏开路电压.实验结果表明,Li掺杂的Cu1-xLixInSe2能有效提高光电材料的性能.
参考文献
| [1] | Onuma Y.;Ichikawa S.;Harada M.;Tanaka H.;Koizumi A. Miyajima Y.;Takeuchi K..Preparation and characterization of CuInS2 thin films solar cells with large grain[J].Solar Energy Materials and Solar Cells: An International Journal Devoted to Photovoltaic, Photothermal, and Photochemical Solar Energy Conversion,20013(3):261-269. |
| [2] | Chiang, Chen-Su;Lee, W. H.;Chang, T. W.;Su, Y. H..Improving conversion efficiency of co-electrodeposited CuInSe2 thin film solar cells with substrate and solution heating[J].Journal of Applied Electrochemistry,20156(6):549-556. |
| [3] | Schlenker E;Mertens V;Parisi J;Reineke-Koch R;Kontges M.Schottky contact analysis of photovoltaic chalcopyrite thin film absorbers[J].Physics Letters, A,20072/3(2/3):229-233. |
| [4] | Jakhmola, P.;Agarwal, G.;Jha, P. K.;Bhatnagar, S. P..Growth and characterization of chalcopyrite CuInSe2 nanoparticles[J].Indian journal of physics and proceedings of the Indian Association for the Cultivation of Science,20153(3):225-231. |
| [5] | Schoen, D.T.;Peng, H.;Cui, Y..CuInSe_2 nanowires from facile chemical transformation of In _2Se_3 and their integration in single-nanowire devices[J].ACS nano,20134(4):3205-3211. |
| [6] | Bereznev S;Kois J;Golovtsov I;Opik A;Mellikov E.Electrodeposited (Cu-In-Se)/polypyrrole PV structures[J].Thin Solid Films: An International Journal on the Science and Technology of Thin and Thick Films,20060(0):425-429. |
| [7] | Wei SH.;Zunger A.;Zhang SB..Effects of Ga addition to CuInSe2 on its electronic, structural, and defect properties[J].Applied physics letters,199824(24):3199-3201. |
| [8] | QIFENG HAN;QIANG LIU;CHENGHONG DUAN;GUOPING DU;WANGZHOU SHI.Effects of Annealing on Structural and Electrical Properties of CuInSe_(2) Thin Films Prepared by Hybrid Sputtering/Evaporation Processes[J].Journal of Electronic Materials,20116(6):1452-1456. |
| [9] | Weise S.;Lenz A.;Schumann B.;Kramer V.;Nowak E..INVESTIGATIONS OF THE SYSTEM LIINSE2-CUINSE2[J].Journal of Crystal Growth,19961/4(1/4):718-721. |
| [10] | A.M.Klimova;Mohammad Arif;O.V.Tolochko.Preparation and Properties of Copper Indium Diselenide CuInSe_2[J].Glass Physics and Chemistry: A Journal on the Structural, Physical, and Chemical Properties and Nature of Inorganic Glasses and Glass-Forming Melts,20063(3):325-329. |
| [11] | Yang, C.;Wang, Y.;Li, S.;Wan, D.;Huang, F..CuSbSe_2-assisted sintering of CuInSe_2 at low temperature[J].Journal of Materials Science,201220(20):7085-7089. |
| [12] | Kajari Das;Subhendu K. Panda;S. Chaudhuri.Fabrication of nanostructured CuInS_2 thin films by ion layer gas reaction method[J].Applied Surface Science: A Journal Devoted to the Properties of Interfaces in Relation to the Synthesis and Behaviour of Materials,200711(11):5166-5172. |
| [13] | Schon JH..Extrinsic doping of CuGaSe2 single crystals[J].Journal of Physics, D. Applied Physics: A Europhysics Journal,20003(3):286-291. |
| [14] | Vargas WE;Niklasson GA.Applicability conditions of the Kubelka-Munk theory[J].Applied optics,199722(22):5580-5586. |
| [15] | Wei SH.;Zunger A..BAND OFFSETS AND OPTICAL BOWINGS OF CHALCOPYRITES AND ZN-BASED II-VI ALLOYS[J].Journal of Applied Physics,19956(6):3846-3856. |
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